Datasheet > JANSR2N7490T3

JANSR2N7490T3

更新时间： 2024-11-06 06:00:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	175K
描述
Power Field-Effect Transistor, 10A I(D), 250V, 0.41ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN

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JANSR2N7490T3 数据手册

ꢁ

PD - 93823B

IRHY57234CMSE

RADIATION HARDENED

POWER MOSFET

JANSR2N7490T3

250V, N-CHANNEL

THRU-HOLE (TO-257AA)

REF: MIL-PRF-19500/705

TECHNOLOGY

Product Summary

Part Number

Radiation Level R_DS(on)

ID QPL Part Number

IRHY57234CMSE 100K Rads (Si)

0.41Ω 9.6A JANSR2N7490T3

TO-257AA

International Rectifier’s R5^TMtechnology provides

high performance power MOSFETs for space

applications. These devices have been characterized

for Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm²)). The combination

of low RDS(on) and low gate charge reduces the

power losses in switching applications such as DC

to DC converters and motor control. These devices

retain all of the well established advantages of

MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of

electrical parameters.

Features:

Single Event Effect (SEE) Hardened

Ultra Low RDS(on)

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Eyelets

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C Continuous Drain Current

9.6

= 12V, T = 100°C Continuous Drain Current

6.0

38.4

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

W/°C

0.6

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

±20

9.6

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

7.5

V/ns

dv/dt

2.4

-55 to 150

^oC

Storage Temperature Range

STG

Lead Temperature

Weight

300 (0.063in./1.6mm from case for 10sec)

4.3( Typical )

For footnotes refer to the last page

www.irf.com

06/16/04

12 3 4 5 6 7 8

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