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JANSR2N7500U5 PDF预览

JANSR2N7500U5

更新时间: 2024-11-18 03:59:07
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管脉冲
页数 文件大小 规格书
8页 176K
描述
RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-2)

JANSR2N7500U5 技术参数

是否Rohs认证:不符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.38Is Samacsys:N
其他特性:RADIATION HARDENED雪崩能效等级(Eas):56 mJ
配置:SINGLE最小漏源击穿电压:130 V
最大漏极电流 (Abs) (ID):9 A最大漏极电流 (ID):9 A
最大漏源导通电阻:0.13 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:S-CBCC-N15JESD-609代码:e0
元件数量:1端子数量:15
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:SQUARE
封装形式:CHIP CARRIER峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):25 W
最大脉冲漏极电流 (IDM):36 A认证状态:Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:NO LEAD
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

JANSR2N7500U5 数据手册

 浏览型号JANSR2N7500U5的Datasheet PDF文件第2页浏览型号JANSR2N7500U5的Datasheet PDF文件第3页浏览型号JANSR2N7500U5的Datasheet PDF文件第4页浏览型号JANSR2N7500U5的Datasheet PDF文件第5页浏览型号JANSR2N7500U5的Datasheet PDF文件第6页浏览型号JANSR2N7500U5的Datasheet PDF文件第7页 
                                                                            
PD - 94325A  
IRHE57133SE  
JANSR2N7500U5  
130V, N-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT(SMD-2)  
REF: MIL5-PRF-19500/707  
TECHNOLOGY  
™
Product Summary  
Part Number  
IRHE57133SE  
Radiation Level RDS(on)  
100K Rads (Si) 0.13Ω  
ID  
QPL Part Number  
9.0A JANSR2N7500U5  
LCC-18  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space  
applications. These devices have been characterized  
for Single Event Effects (SEE) with useful performance  
up to an LET of 80 (MeV/(mg/cm2)). The combination  
of low RDS(on) and low gate charge reduces the  
power losses in switching applications such as DC  
to DC converters and motor control. These devices  
retain all of the well established advantages of  
MOSFETs such as voltage control, fast switching,  
ease of paralleling and temperature stability of  
electrical parameters.  
Features:  
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Ultra Low RDS(on)  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Surface Mount  
Ceramic Package  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
9.0  
D
D
GS  
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
6.0  
36  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
DM  
@ T = 25°C  
P
25  
W
W/°C  
V
D
C
Linear Derating Factor  
0.2  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
±20  
56  
GS  
E
mJ  
A
AS  
I
9.0  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
2.5  
mJ  
V/ns  
AR  
dv/dt  
6.6  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
Pckg. Mounting Surface Temp.  
Weight  
300 (for 5s)  
0.42 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
05/06/04  

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