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JANSR2N7549U2 PDF预览

JANSR2N7549U2

更新时间: 2023-12-06 20:12:13
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 341K
描述
Rad hard, -200V, -35.5A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si) TID, QPL

JANSR2N7549U2 数据手册

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PD-94168E  
IRHNA597260  
JANSR2N7549U2  
200V, P-CHANNEL  
REF: MIL-PRF-19500/713  
RADIATION HARDENED  
POWER MOSFET  
TECHNOLOGY  
SURFACE MOUNT (SMD-2)  
R
5
Product Summary  
Part Number  
IRHNA597260  
IRHNA593260  
Radiation Level RDS(on)  
ID  
QPL Part Number  
JANSR2N7549U2  
JANSF2N7549U2  
100 kRads(Si)  
300 kRads(Si)  
-33.5A  
-33.5A  
0.102  
0.102  
Description  
Features  
Single Event Effect (SEE) Hardened  
Low RDS(on)  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Electrically Isolated  
Ceramic Package  
IRHNA597260 is part of the International Rectifier HiRel  
family of products. IR HiRel R5 technology provides high  
performance power MOSFETs for space applications.  
These devices have been characterized for both Total  
Dose and Single Event Effect (SEE) with useful  
performance up to LET of 80 (MeV/(mg/cm2). The  
combination of low RDS(on) and low gate charge reduces  
the power losses in switching applications such as DC-DC  
converters and motor controllers. These devices retain all  
of the well established advantages of MOSFETs such as  
voltage control, fast switching, ease of paralleling and  
temperature stability of electrical parameters.  
Light Weight  
Surface Mount  
ESD Rating: Class 3A per MIL-STD-750,  
Method 1020  
Absolute Maximum Ratings  
Parameter  
Pre-Irradiation  
Units  
-33.5  
ID @ VGS = -12V, TC = 25°C Continuous Drain Current  
ID @ VGS = -12V, TC = 100°C Continuous Drain Current  
-21  
-134  
250  
2.0  
A
IDM  
Pulsed Drain Current  
W
W/°C  
V
PD @TC = 25°C  
Maximum Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy   
Avalanche Current   
± 20  
303  
VGS  
EAS  
IAR  
mJ  
A
-33.5  
25  
mJ  
V/ns  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt   
Operating Junction and  
Storage Temperature Range  
Lead Temperature  
-10  
-55 to + 150  
TSTG  
°C  
g
300 (for 5s)  
3.3 (Typical)  
Weight  
For Footnotes, refer to the page 2.  
1
2017-12-21  
International Rectifier HiRel Products, Inc.  

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