PD-94168E
IRHNA597260
JANSR2N7549U2
200V, P-CHANNEL
REF: MIL-PRF-19500/713
RADIATION HARDENED
POWER MOSFET
TECHNOLOGY
SURFACE MOUNT (SMD-2)
R
5
Product Summary
Part Number
IRHNA597260
IRHNA593260
Radiation Level RDS(on)
ID
QPL Part Number
JANSR2N7549U2
JANSF2N7549U2
100 kRads(Si)
300 kRads(Si)
-33.5A
-33.5A
0.102
0.102
SMD-2
Description
Features
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Ceramic Package
IRHNA597260 is part of the International Rectifier HiRel
family of products. IR HiRel R5 technology provides high
performance power MOSFETs for space applications.
These devices have been characterized for both Total
Dose and Single Event Effect (SEE) with useful
performance up to LET of 80 (MeV/(mg/cm2). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC-DC
converters and motor controllers. These devices retain all
of the well established advantages of MOSFETs such as
voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Light Weight
Surface Mount
ESD Rating: Class 3A per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Parameter
Pre-Irradiation
Units
-33.5
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
-21
-134
250
2.0
A
IDM
Pulsed Drain Current
W
W/°C
V
PD @TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
± 20
303
VGS
EAS
IAR
mJ
A
-33.5
25
mJ
V/ns
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
-10
-55 to + 150
TSTG
°C
g
300 (for 5s)
3.3 (Typical)
Weight
For Footnotes, refer to the page 2.
1
2017-12-21
International Rectifier HiRel Products, Inc.