Datasheet > JANSR2N7561T2

JANSR2N7561T2

更新时间： 2024-11-19 14:56:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	577K
描述
Rad hard, 250V, 5.4A, single, N-channel MOSFET, R5 in a TO-205AF package - TO-205AF, 100 krad(Si) TID, QPL

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JANSR2N7561T2 数据手册

PD-93831D

IRHF57234SE

JANSR2N7561T2

250V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

THRU-HOLE TO-205AF (TO-39)

REF: MIL-PRF-19500/706

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

I_D

QPL Part Number

IRHF57234SE

100 kRads(Si)

5.2A

JANSR2N7561T2

0.42

TO-39

Description

Features

IR HiRel R5 technology provides high performance power

MOSFETs for space applications. These devices have

been characterized for Single Event Effects (SEE) with

useful performance up to an LET of 80 (MeV/(mg/cm²)).

The combination of low RDS(on) and low gate charge

reduces the power losses in switching applications such as

DC to DC converters and motor control. These devices

retain all of the well established advantages of MOSFETs

such as voltage control, fast switching and temperature

stability of electrical parameters.

 Single Event Effect (SEE) Hardened

 Ultra Low RDS(on)

 Identical Pre- and Post-Electrical Test Conditions

 Repetitive Avalanche Ratings

 Dynamic dv/dt Ratings

 Simple Drive Requirements

 Hermetically Sealed

 ESD Rating: Class 1C per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Value

Parameter

Units

I_D1@ V_GS= 12V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= 12V, T_C= 100°C Continuous Drain Current

5.2

3.3

20.8

I_DM@ T_C= 25°C

P_D@ T_C= 25°C

Pulsed Drain Current 

W/°C

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

0.2

V_GS

E_AS

I_AR

± 20

142

5.2

V/ns

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

2.5

6.8

-55 to + 150

T_STG

°C

300 (0.063 in. /1.6 mm from case for 10s)

0.98 (Typical)

Weight

For Footnotes, refer to the page 2.

2019-06-13

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7 8

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与JANSR2N7561T2相关器件

型号	品牌	获取价格	描述	数据表
JANSR2N7579U2	INFINEON	获取价格	Rad hard, 100V, 56A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si)
JANSR2N7579U2A	INFINEON	获取价格	Rad hard, 100V, 56A, single, N-channel MOSFET, R6 in a SupIR-SMD package - SupIR-SMD, 100
JANSR2N7580T1	INFINEON	获取价格	Rad hard, 100V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254
JANSR2N7581U2	INFINEON	获取价格	Rad hard, 150V, 49A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si)
JANSR2N7581U2A	INFINEON	获取价格	Rad hard, 150V, 56A, single, N-channel MOSFET, R6 in a SupIR-SMD package - SupIR-SMD, 100
JANSR2N7582T1	INFINEON	获取价格	Rad hard, 150V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254
JANSR2N7583U2	INFINEON	获取价格	Rad hard, 200V, 40A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si)
JANSR2N7583U2A	INFINEON	获取价格	Rad hard, 200V, 56A, single, N-channel MOSFET, R6 in a SupIR-SMD package - SupIR-SMD, 100
JANSR2N7584D4	INFINEON	获取价格	Rad hard, 200V, 35A, single, N-channel MOSFET, R6 in a TO-254AA Tabless Low Ohmic package
JANSR2N7584T1	INFINEON	获取价格	Rad hard, 200V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254

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