Datasheet > JANSR2N7598U3

JANSR2N7598U3

更新时间： 2024-11-22 14:51:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	1025K
描述
Rad hard, 600V, 3.4A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, QPL

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

JANSR2N7598U3 数据手册

PD-97198E

2N7598U3

IRHNJ67C30

600V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

TECHNOLOGY

SURFACE MOUNT (SMD-0.5)

Product Summary

Part Number

IRHNJ67C30

IRHNJ63C30

Radiation Level RDS(on)

I_D

100 kRads(Si)

300 kRads(Si)

3.4A

3.1

SMD-0.5

Description

Features

IR HiRel R6 technology provides superior power

MOSFETs for space applications. These devices have

improved immunity to Single Event Effect (SEE) and

have been characterized for useful performance with

Linear Energy Transfer (LET) up to 90MeV/(mg/cm²).

Their combination of very low R_DS(on)and faster switching

times reduces power loss and increases power density in

today’s high speed switching applications such as DC-DC

converters and motor controllers. These devices retain

all of the well established advantages of MOSFETs such

as voltage control, ease of paralleling and temperature

stability of electrical parameters.

 Low R_DS(on)

 Fast Switching

 Single Event Effect (SEE) Hardened

 Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

 Surface Mount

 Ceramic Package

 Light Weight

 ESD Rating: Class 2 per MIL-STD-750, Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Value

Parameter

Units

I_D1@ V_GS= 12V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= 12V, T_C= 100°C Continuous Drain Current

3.4

2.2

I_DM@T_C= 25°C

P_D@T_C= 25°C

Pulsed Drain Current 

13.6

Maximum Power Dissipation

W/°C

Linear Derating Factor

0.6

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

± 20

3.4

E_AR

dv/dt

T_J

7.5

V/ns

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Pckg. Mounting Surface Temp.

Weight

9.2

-55 to + 150

T_STG

°C

300 (for 5s)

1.0 (Typical)

For Footnotes refer to the page 2.

2021-02-05

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7 8

中文翻译

下载PDF

与JANSR2N7598U3相关器件

型号	品牌	获取价格	描述	数据表
JANSR2N7609U8	INFINEON	获取价格	Power Field-Effect Transistor, 6.5A I(D), 100V, 0.29ohm, 1-Element, N-Channel, Silicon, Me
JANSR2N7616UB	INFINEON	获取价格	Small Signal Field-Effect Transistor, 0.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal
JANSR2N7616UBC	INFINEON	获取价格	Small Signal Field-Effect Transistor, 0.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal
JANSR2N7616UBCN	INFINEON	获取价格	Rad hard, 60V, 0.8A, single, N-channel MOSFET, R7 in a UBC package - UBCN, 100 krad(Si) TI
JANSR2N7616UBN	INFINEON	获取价格	Small Signal Field-Effect Transistor, 0.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal
JANSR2N7624U3	INFINEON	获取价格	Power Field-Effect Transistor, 14.9A I(D), 60V, 0.072ohm, 1-Element, P-Channel, Silicon, M
JANSR2N7625T3	INFINEON	获取价格	Power Field-Effect Transistor,
JANSR2N7626UB	INFINEON	获取价格	Rad hard, -60V, -0.53A, single, P-channel MOSFET, R7 in a UB package - UB, 100 krad(Si) TI
JANSR2N7626UBC	INFINEON	获取价格	Small Signal Field-Effect Transistor, 0.53A I(D), 60V, 1-Element, P-Channel, Silicon, Meta
JANSR2N7626UBCN	INFINEON	获取价格	Rad hard, -60V, -0.53A, single, P-channel MOSFET, R7 in a UBC package - UBCN, 100 krad(Si)

与JANSR2N7598U3相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

27
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

19
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

49
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

47

产品中心

服务支持

精选活动

关于我们

帮助中心

JANSR2N7598U3

JANSR2N7598U3 数据手册

与JANSR2N7598U3相关器件

与JANSR2N7598U3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

JANSR2N7598U3

JANSR2N7598U3 数据手册

与JANSR2N7598U3相关器件

与JANSR2N7598U3相关文章

您还可以找

您在本页遇到什么问题？