PD-97906A
IRHNS67160
JANSR2N7579U2A
100V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SupIR-SMD)
REF: MIL-PRF-19500/760
TECHNOLOGY
R
6
Product Summary
Part Number
IRHNS67160
IRHNS63160
Radiation Level RDS(on)
ID
QPL Part Number
JANSR2N7579U2A
JANSF2N7579U2A
100 kRads(Si)
300 kRads(Si)
56A*
56A*
0.010
0.010
SupIR-SMD
Features
Description
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Hermetically Sealed
Ceramic Package
Light Weight
Surface Mount
ESD Rating: Class 3A per MIL-STD-750,
Method 1020
IR HiRel R6 technology provides high performance power
MOSFETs for space applications. These devices have been
characterized for both Total Dose and Single Event Effect
(SEE) with useful performance up to LET of 90 (MeV/(mg/cm2).
The combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC-DC
converters and motor controllers. These devices retain all of the
well established advantages of MOSFETs such as voltage
control, fast switching, and temperature stability of electrical
parameters.
Absolute Maximum Ratings
Pre-Irradiation
Symbol
Value
Parameter
Units
ID1 @ VGS = 12V, TC = 25°C Continuous Drain Current
ID2 @ VGS = 12V, TC = 100°C Continuous Drain Current
56*
A
56*
224
250
2.0
±20
462
56
IDM @TC = 25°C
PD @TC = 25°C
Pulsed Drain Current
W
W/°C
V
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
VGS
EAS
IAR
mJ
A
mJ
EAR
dv/dt
TJ
25
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
V/ns
5.0
-55 to + 150
TSTG
°C
g
300 (for 5s)
3.3 (Typical)
Weight
* Current is limited by package
For Footnotes, refer to the page 2.
1
International Rectifier HiRel Products, Inc.
2020-04-13