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JANSR2N7579U2A PDF预览

JANSR2N7579U2A

更新时间: 2023-12-06 20:12:27
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 1520K
描述
Rad hard, 100V, 56A, single, N-channel MOSFET, R6 in a SupIR-SMD package - SupIR-SMD, 100 krad TID, QPL

JANSR2N7579U2A 数据手册

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PD-97906A  
IRHNS67160  
JANSR2N7579U2A  
100V, N-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT (SupIR-SMD)  
REF: MIL-PRF-19500/760  
TECHNOLOGY  
R
6
Product Summary  
Part Number  
IRHNS67160  
IRHNS63160  
Radiation Level RDS(on)  
ID  
QPL Part Number  
JANSR2N7579U2A  
JANSF2N7579U2A  
100 kRads(Si)  
300 kRads(Si)  
56A*  
56A*  
0.010  
0.010  
SupIR-SMD  
Features  
Description  
Single Event Effect (SEE) Hardened  
Low RDS(on)  
Low Total Gate Charge  
Simple Drive Requirements  
Hermetically Sealed  
Ceramic Package  
Light Weight  
Surface Mount  
ESD Rating: Class 3A per MIL-STD-750,  
Method 1020  
IR HiRel R6 technology provides high performance power  
MOSFETs for space applications. These devices have been  
characterized for both Total Dose and Single Event Effect  
(SEE) with useful performance up to LET of 90 (MeV/(mg/cm2).  
The combination of low RDS(on) and low gate charge reduces  
the power losses in switching applications such as DC-DC  
converters and motor controllers. These devices retain all of the  
well established advantages of MOSFETs such as voltage  
control, fast switching, and temperature stability of electrical  
parameters.  
Absolute Maximum Ratings  
Pre-Irradiation  
Symbol  
Value  
Parameter  
Units  
ID1 @ VGS = 12V, TC = 25°C Continuous Drain Current  
ID2 @ VGS = 12V, TC = 100°C Continuous Drain Current  
56*  
A
56*  
224  
250  
2.0  
±20  
462  
56  
IDM @TC = 25°C  
PD @TC = 25°C  
Pulsed Drain Current   
W
W/°C  
V
Maximum Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy   
Avalanche Current   
VGS  
EAS  
IAR  
mJ  
A
mJ  
EAR  
dv/dt  
TJ  
25  
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt   
Operating Junction and  
Storage Temperature Range  
Lead Temperature  
V/ns  
5.0  
-55 to + 150  
TSTG  
°C  
g
300 (for 5s)  
3.3 (Typical)  
Weight  
* Current is limited by package  
For Footnotes, refer to the page 2.  
1
International Rectifier HiRel Products, Inc.  
2020-04-13  

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