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JANSR2N7582T1 PDF预览

JANSR2N7582T1

更新时间: 2024-11-19 14:56:11
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 445K
描述
Rad hard, 150V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 100 krad(Si) TID, QPL

JANSR2N7582T1 数据手册

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PD-96958C  
IRHMS67164  
JANSR2N7582T1  
150V, N-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (Low-Ohmic TO-254AA)  
REF: MIL-PRF-19500/753  
TECHNOLOGY  
R
6
Product Summary  
Part Number  
IRHMS67164  
IRHMS63164  
Radiation Level RDS(on)  
ID  
QPL Part Number  
JANSR2N7582T1  
JANSF2N7582T1  
100 kRads(Si)  
300 kRads(Si)  
45A*  
45A*  
0.019  
0.019  
Description  
Features  
Low RDS(on)  
Fast Switching  
Single Event Effect (SEE) Hardened  
Low Total Gate Charge  
Simple Drive Requirements  
Hermetically Sealed  
Ceramic Eyelets  
Electrically Isolated  
Light Weight  
ESD Rating: Class 3A per MIL-STD-750, Method 1020  
IR HiRel R6 technology provides high performance  
power MOSFETs for space applications. These  
devices have been characterized for both Total  
Dose and Single Event Effect (SEE) with useful  
performance up to LET of 90 (MeV/(mg/cm2). The  
combination of low RDS(on) and low gate charge  
reduces the power losses in switching applications  
such as DC-DC converters and motor controllers.  
These devices retain all of the well established  
advantages of MOSFETs such as voltage control,  
fast switching and temperature stability of electrical  
Absolute Maximum Ratings  
Pre-Irradiation  
Symbol  
Value  
Parameter  
Units  
ID1 @ VGS = 12V, TC = 25°C  
Continuous Drain Current  
45*  
44  
A
ID2 @ VGS = 12V, TC = 100°C Continuous Drain Current  
IDM @ TC = 25°C  
PD @ TC = 25°C  
Pulsed Drain Current  
180  
208  
W
W/°C  
V
Maximum Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy   
Avalanche Current   
1.67  
± 20  
353  
45  
VGS  
EAS  
IAR  
mJ  
A
mJ  
V/ns  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt   
Operating Junction and  
Storage Temperature Range  
Lead Temperature  
20.8  
8.2  
-55 to + 150  
TSTG  
°C  
g
300 (0.063 in. /1.6 mm from case for 10s)  
9.3 (Typical)  
Weight  
*Current is limited by package  
For footnotes refer to the page 2.  
1
2018-12-18  
International Rectifier HiRel Products, Inc.  

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