Datasheet > JANSR2N7586T1

JANSR2N7586T1

更新时间： 2023-12-06 20:12:20

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	1971K
描述
Rad hard, 250V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 100 krad(Si) TID, QPL

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JANSR2N7586T1 数据手册

IRHMS67264 (JANSR2N7586T1)

PD-96991D

Radiation Hardened Power MOSFET

Thru-Hole (TO-254AA Low Ohmic)

250V, 45A, N-channel, R6 Technology

Features

Product Summary



Single event effect (SEE) hardened

(up to LET of 85 MeV·cm²/mg)

Low R_DS(on)



Part number: IRHMS67264 (JANSR2N7586T1),

IRHMS63264 (JANSR2N7586T1)

REF: MIL-PRF-19500/753

Radiation level: 100 krad (Si),

300 krad (Si)



Fast switching

Low total gate charge

Simple drive requirements

Hermetically sealed



R_{DS(on), max}: 41m

Electrically isolated

Ceramic eyelets

Light weight

ESD rating: Class 3A per MIL-STD-750, Method 1020

TO-254AA Low Ohmic

Potential Applications



DC-DC converter

Motor drives



Product Validation

Qualified to JANS screening flow according to MIL-PRF-19500 for space applications

Description

IR HiRel R6 technology provides superior power MOSFETs for space applications. These devices have improved

immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy

Transfer (LET) up to 85 MeV·cm²/mg. Their combination of low R_DS(on)and fast switching times will allow for better

performance in applications such as DC-DC converters or motor drives. These devices retain all of the well

established advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical

parameters.

Ordering Information

Table 1

Part number

IRHMS67264

Ordering options

Package

Screening Level

COTS

TID Level

Low-Ohmic TO-254AA

100 krad (Si)

300 krad (Si)

IRHMS67264SCS

JANSR2N7586T1

IRHMS63264

S-Level

JANS

COTS

IRHMS63264SCS

JANSF2N7586T1

S-Level

JANS

Please read the Important Notice and Warnings at the end of this document

page 1 of 14

www.infineon.com/irhirel

2022-03-07

12 3 4 5 6 7...14

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与JANSR2N7586T1相关器件

型号	品牌	获取价格	描述	数据表
JANSR2N7587U3	INFINEON	获取价格	Rad hard, 100V, 22A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad
JANSR2N7588T3	INFINEON	获取价格	Rad hard, 100V, 20A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257
JANSR2N7589U3	INFINEON	获取价格	Rad hard, 150V, 19A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad
JANSR2N7591U3	INFINEON	获取价格	Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad
JANSR2N7591U3C	INFINEON	获取价格	Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad
JANSR2N7592T3	INFINEON	获取价格	Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257
JANSR2N7593U3	INFINEON	获取价格	Rad hard, 250V, 12.4A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 kr
JANSR2N7594T3	INFINEON	获取价格	Rad hard, 250V, 12A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257
JANSR2N7598U3	INFINEON	获取价格	Rad hard, 600V, 3.4A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 kra
JANSR2N7609U8	INFINEON	获取价格	Power Field-Effect Transistor, 6.5A I(D), 100V, 0.29ohm, 1-Element, N-Channel, Silicon, Me

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