PD-95813H
IRHLUB770Z4
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (UB)
JANSR2N7616UB
60V, N-CHANNEL
REF: MIL-PRF-19500/744
TECHNOLOGY
Product Summary
Part Number
Radiation Level RDS(on)
ID
QPL Part Number
IRHLUB770Z4 100K Rads (Si)
0.68Ω 0.8A JANSR2N7616UB
IRHLUB730Z4 300K Rads (Si) 0.68Ω 0.8A JANSF2N7616UB
UB
Refer to Page 11 for 3 Additional Part Numbers -
IRHLUBN770Z4, IRHLUBC770Z4, IRHLUBCN770Z4
(SHIELDED METAL LID)
Features:
n
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
International Rectifier’s R7TM Logic Level Power MOSFETs
provide simple solution to interfacing CMOS and TTL control
circuits to power devices in space and other radiation
environments. The threshold voltage remains within acceptable
operating limits over the full operating temperature and post
radiation. This is achieved while maintaining single event
gate rupture and single event burnout immunity.
Light Weight
These devices are used in applications such as current boost
low signal source in PWM, voltage comparator and operational
amplifiers.
Complimentary P-Channel Available -
IRHLUB7970Z4, IRHLUBN7970Z4
IRHLUBC7970Z4 & IRHLUBCN7970Z4
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= 4.5V, T = 25°C Continuous Drain Current
0.8
D
D
GS
GS
C
A
I
= 4.5V, T = 100°C Continuous Drain Current
0.5
3.2
C
I
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
DM
@ T = 25°C
P
0.6
W
W/°C
V
D
C
0.005
±10
V
GS
E
26.6
0.8
mJ
A
AS
I
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
0.06
4.0
mJ
V/ns
AR
dv/dt
T
-55 to 150
J
°C
T
Storage Temperature Range
Lead Temperature
STG
300 (for 5s)
43 (Typical)
Weight
mg
For footnotes refer to the last page
www.irf.com
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