Datasheet > JANSR2N7616UBC

JANSR2N7616UBC

更新时间： 2024-11-06 07:24:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	215K
描述
Small Signal Field-Effect Transistor, 0.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SELALED, UBC-4

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

JANSR2N7616UBC 数据手册

PD-95813H

IRHLUB770Z4

RADIATION HARDENED

LOGIC LEVEL POWER MOSFET

SURFACE MOUNT (UB)

JANSR2N7616UB

60V, N-CHANNEL

REF: MIL-PRF-19500/744

TECHNOLOGY

Product Summary

Part Number

Radiation Level RDS(on)

QPL Part Number

IRHLUB770Z4 100K Rads (Si)

0.68Ω 0.8A JANSR2N7616UB

IRHLUB730Z4 300K Rads (Si) 0.68Ω 0.8A JANSF2N7616UB

Refer to Page 11 for 3 Additional Part Numbers -

IRHLUBN770Z4, IRHLUBC770Z4, IRHLUBCN770Z4

(SHIELDED METAL LID)

Features:

5V CMOS and TTL Compatible

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

International Rectifier’s R7^TMLogic Level Power MOSFETs

provide simple solution to interfacing CMOS and TTL control

circuits to power devices in space and other radiation

environments. The threshold voltage remains within acceptable

operating limits over the full operating temperature and post

radiation. This is achieved while maintaining single event

gate rupture and single event burnout immunity.

Light Weight

These devices are used in applications such as current boost

low signal source in PWM, voltage comparator and operational

amplifiers.

Complimentary P-Channel Available -

IRHLUB7970Z4, IRHLUBN7970Z4

IRHLUBC7970Z4 & IRHLUBCN7970Z4

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 4.5V, T = 25°C Continuous Drain Current

0.8

= 4.5V, T = 100°C Continuous Drain Current

0.5

3.2

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

@ T = 25°C

0.6

W/°C

0.005

±10

26.6

0.8

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

0.06

4.0

V/ns

dv/dt

-55 to 150

°C

Storage Temperature Range

Lead Temperature

STG

300 (for 5s)

43 (Typical)

Weight

For footnotes refer to the last page

www.irf.com

11/15/12

12 3 4 5 6 7...11

中文翻译

下载PDF

与JANSR2N7616UBC相关器件

型号	品牌	获取价格	描述	数据表
JANSR2N7616UBCN	INFINEON	获取价格	Rad hard, 60V, 0.8A, single, N-channel MOSFET, R7 in a UBC package - UBCN, 100 krad(Si) TI
JANSR2N7616UBN	INFINEON	获取价格	Small Signal Field-Effect Transistor, 0.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal
JANSR2N7624U3	INFINEON	获取价格	Power Field-Effect Transistor, 14.9A I(D), 60V, 0.072ohm, 1-Element, P-Channel, Silicon, M
JANSR2N7625T3	INFINEON	获取价格	Power Field-Effect Transistor,
JANSR2N7626UB	INFINEON	获取价格	Rad hard, -60V, -0.53A, single, P-channel MOSFET, R7 in a UB package - UB, 100 krad(Si) TI
JANSR2N7626UBC	INFINEON	获取价格	Small Signal Field-Effect Transistor, 0.53A I(D), 60V, 1-Element, P-Channel, Silicon, Meta
JANSR2N7626UBCN	INFINEON	获取价格	Rad hard, -60V, -0.53A, single, P-channel MOSFET, R7 in a UBC package - UBCN, 100 krad(Si)
JANSR2N7626UBN	INFINEON	获取价格	Small Signal Field-Effect Transistor, 0.53A I(D), 60V, 1-Element, P-Channel, Silicon, Meta
JANSR2N7647D5	INFINEON	获取价格	Rad hard, 60V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic package -
JANSR2N7647T3	INFINEON	获取价格	Rad hard, 60V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257A

与JANSR2N7616UBC相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

9
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

35
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

JANSR2N7616UBC

JANSR2N7616UBC 数据手册

与JANSR2N7616UBC相关器件

与JANSR2N7616UBC相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

JANSR2N7616UBC

JANSR2N7616UBC 数据手册

与JANSR2N7616UBC相关器件

与JANSR2N7616UBC相关文章

您还可以找

您在本页遇到什么问题？