Datasheet > JANSR2N7594T3

JANSR2N7594T3

更新时间： 2024-09-25 14:56:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
15页	619K
描述
Rad hard, 250V, 12A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257AA Low Ohmic, 100 krad(Si) TID, QPL

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JANSR2N7594T3 数据手册

IRHYS67234CM (JANSR2N7594T3)

PD-97193F

Radiation Hardened Power MOSFET

Thru-Hole (Low–Ohmic TO-257AA)

250V, 12A, N-channel, R6 Technology

Features

Product Summary

•

Single event effect (SEE) hardened

•

BV_DSS: 250V

I_D:12A

R_{DS (on), max:}22m

Q_{G, max:}40nC

Low R_{DS (on)}

Low total gate charge

Fast switching

REF: MIL-PRF-19500/755

Simple drive requirements

Hermetically sealed

Electrically isolated

Ceramic eyelets

Light weight

ESD rating: Class 2 per MIL-STD-750, Method 1020

Potential Applications

Low-Ohmic

TO-257AA

•

Isolated DC-DC converters

Motor drives

Electric propulsion

Thermal management

Product Validation

Qualified to JANS screening flow according to MIL-PRF-19500 for space applications

Description

IR HiRel R6 technology provides high performance power MOSFETs for space applications. These devices have

been characterized for both Total Dose and Single Event Effect (SEE) with useful performance up to LET of 90

(MeV·cm²/mg). The combination of low R_DS(on)and low gate charge reduces the power losses in switching

applications such as DC-DC converters and motor controllers. These devices retain all of the well-established

advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical

parameters.

Please read the Important Notice and Warnings at the end of this document

www.infineon.com/irhirel

page 1 of 15

2023-08-03

12 3 4 5 6 7...15

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