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JANSR2N7594T3 PDF预览

JANSR2N7594T3

更新时间: 2024-11-19 14:56:39
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
15页 619K
描述
Rad hard, 250V, 12A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257AA Low Ohmic, 100 krad(Si) TID, QPL

JANSR2N7594T3 数据手册

 浏览型号JANSR2N7594T3的Datasheet PDF文件第2页浏览型号JANSR2N7594T3的Datasheet PDF文件第3页浏览型号JANSR2N7594T3的Datasheet PDF文件第4页浏览型号JANSR2N7594T3的Datasheet PDF文件第5页浏览型号JANSR2N7594T3的Datasheet PDF文件第6页浏览型号JANSR2N7594T3的Datasheet PDF文件第7页 
IRHYS67234CM (JANSR2N7594T3)  
PD-97193F  
Radiation Hardened Power MOSFET  
Thru-Hole (LowOhmic TO-257AA)  
250V, 12A, N-channel, R6 Technology  
Features  
Product Summary  
Single event effect (SEE) hardened  
BVDSS: 250V  
ID: 12A  
RDS (on), max: 22m  
QG, max: 40nC  
Low RDS (on)  
Low total gate charge  
Fast switching  
REF: MIL-PRF-19500/755  
Simple drive requirements  
Hermetically sealed  
Electrically isolated  
Ceramic eyelets  
Light weight  
ESD rating: Class 2 per MIL-STD-750, Method 1020  
Potential Applications  
Low-Ohmic  
TO-257AA  
Isolated DC-DC converters  
Motor drives  
Electric propulsion  
Thermal management  
Product Validation  
Qualified to JANS screening flow according to MIL-PRF-19500 for space applications  
Description  
IR HiRel R6 technology provides high performance power MOSFETs for space applications. These devices have  
been characterized for both Total Dose and Single Event Effect (SEE) with useful performance up to LET of 90  
(MeV·cm2/mg). The combination of low RDS(on) and low gate charge reduces the power losses in switching  
applications such as DC-DC converters and motor controllers. These devices retain all of the well-established  
advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical  
parameters.  
Please read the Important Notice and Warnings at the end of this document  
www.infineon.com/irhirel  
page 1 of 15  
2023-08-03  
 
 
 
 

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