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JANSR2N7626UBC PDF预览

JANSR2N7626UBC

更新时间: 2024-11-06 05:29:11
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 225K
描述
Small Signal Field-Effect Transistor, 0.53A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SELALED, UBC-4

JANSR2N7626UBC 数据手册

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PD-94764L  
IRHLUB7970Z4  
RADIATION HARDENED  
LOGIC LEVEL POWER MOSFET  
SURFACE MOUNT (UB)  
JANSR2N7626UB  
60V, P-CHANNEL  
REF: MIL-PRF-19500/745  
TECHNOLOGY  
™
Product Summary  
Part Number  
Radiation Level RDS(on)  
ID  
QPL Part Number  
IRHLUB7970Z4 100K Rads (Si) 1.4-0.53A JANSR2N7626UB  
IRHLUB7930Z4 300K Rads (Si) 1.4-0.53A JANSF2N7626UB  
UB  
Refer to Page 11 for 3 Additional Part Numbers -  
IRHLUBN7970Z4, IRHLUBC7970Z4, IRHLUBCN7970Z4  
(SHIELDED METAL LID)  
Features:  
n
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible  
Fast Switching  
Single Event Effect (SEE) Hardened  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Light Weight  
Complimentary P-Channel Available -  
IRHLUB770Z4, IRHLUBN770Z4  
IRHLUBC770Z4 & IRHLUBCN770Z4  
International Rectifier’s R7TM Logic Level Power MOSFETs  
provide simple solution to interfacing CMOS and TTL control  
circuits to power devices in space and other radiation  
environments. The threshold voltage remains within acceptable  
operating limits over the full operating temperature and post  
radiation. This is achieved while maintaining single event  
gate rupture and single event burnout immunity.  
These devices are used in applications such as current boost  
low signal source in PWM, voltage comparator and operational  
amplifiers.  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= -4.5V, T = 25°C Continuous Drain Current  
-0.53  
D
D
GS  
GS  
C
A
I
= -4.5V, T = 100°C Continuous Drain Current  
-0.33  
-2.12  
0.57  
C
I
Pulsed Drain Current   
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy ‚  
Avalanche Current   
DM  
@ T = 25°C  
P
W
W/°C  
V
D
C
0.0045  
±10  
V
GS  
E
33.5  
mJ  
A
AS  
I
-0.53  
0.06  
AR  
E
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt ƒ  
Operating Junction  
mJ  
V/ns  
AR  
dv/dt  
-4.4  
T
-55 to 150  
J
°C  
T
Storage Temperature Range  
Lead Temperature  
STG  
300 (for 5s)  
43 (Typical)  
Weight  
mg  
For footnotes refer to the last page  
www.irf.com  
1
09/15/10  

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