Datasheet > JANSR2N7592T3

JANSR2N7592T3

更新时间： 2024-11-22 14:56:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	1389K
描述
Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257AA Low Ohmic, 100 krad(Si) TID, QPL

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JANSR2N7592T3 数据手册

IRHYS67230CM (JANSR2N7592T3)

PD-96925D

Radiation Hardened Power MOSFET

Thru-Hole (Low-Ohmic TO-257AA)

200V, 16A, N-channel, R6 Technology

Product Summary

Features



Single event effect (SEE) hardened



Part number: IRHYS67230CM

IRHYS63230CM

Radiation level: 100 krad(Si),

300 krad(Si)

R_DS(on),max: 130m

I_D: 16A

Low R_DS(on)



Fast switching

Low total gate charge

Simple drive requirements

Hermetically sealed

Ceramic eyelets



Light weight

Electrically Isolated

Potential Applications



DC-DC converter

Motor drives

Low-Ohmic

TO-257AA



Product Validation

Qualified to JANS screening flow according to MIL-PRF-19500 for space applications

Description

IR HiRel R6 technology provides high performance power MOSFETs for space applications. This technology has

over a decade of proven performance and reliability in satellite applications. These devices have been

characterized for both Total Dose and Single Event Effects (SEE). The combination of low R_DS(on)and low gate

charge reduces the power losses in switching applications such as DC to DC converters and motor control. These

devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching and

temperature stability of electrical parameters.

Ordering Information

Table 1

Part number

IRHYS67230CM

Ordering options

Package

Screening Level

COTS

TID Level

TO-257AA

100 krad(Si)

300 krad(Si)

IRHYS67230CMSCS

JANSR2N7592T3

IRHYS63230CM

TO-257AA

S-Level

JANS

COTS

IRHYS63230CMSCS

S-Level

Please read the Important Notice and Warnings at the end of this document

page 1 of 14

www.infineon.com/irhirel

2021-08-06

12 3 4 5 6 7...14

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与JANSR2N7592T3相关器件

型号	品牌	获取价格	描述	数据表
JANSR2N7593U3	INFINEON	获取价格	Rad hard, 250V, 12.4A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 kr
JANSR2N7594T3	INFINEON	获取价格	Rad hard, 250V, 12A, single, N-channel MOSFET, R6 in a TO-257AA Low Ohmic package - TO-257
JANSR2N7598U3	INFINEON	获取价格	Rad hard, 600V, 3.4A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 kra
JANSR2N7609U8	INFINEON	获取价格	Power Field-Effect Transistor, 6.5A I(D), 100V, 0.29ohm, 1-Element, N-Channel, Silicon, Me
JANSR2N7616UB	INFINEON	获取价格	Small Signal Field-Effect Transistor, 0.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal
JANSR2N7616UBC	INFINEON	获取价格	Small Signal Field-Effect Transistor, 0.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal
JANSR2N7616UBCN	INFINEON	获取价格	Rad hard, 60V, 0.8A, single, N-channel MOSFET, R7 in a UBC package - UBCN, 100 krad(Si) TI
JANSR2N7616UBN	INFINEON	获取价格	Small Signal Field-Effect Transistor, 0.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal
JANSR2N7624U3	INFINEON	获取价格	Power Field-Effect Transistor, 14.9A I(D), 60V, 0.072ohm, 1-Element, P-Channel, Silicon, M
JANSR2N7625T3	INFINEON	获取价格	Power Field-Effect Transistor,

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