Datasheet > JANSR2N7647D5

JANSR2N7647D5

更新时间： 2024-11-06 14:54:59

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	1119K
描述
Rad hard, 60V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic package - TO-257AA Tabless Low Ohmic, 100 krad(Si) TID, QPL

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

JANSR2N7647D5 数据手册

PD-97962A

IRHYB9A7034CM

JANSR2N7647D5

60V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

Tabless (Low-Ohmic TO-257AA)

REF: MIL-PRF-19500/775

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

I_D

QPL Part Number

JANSR2N7647D5

JANSF2N7647D5

IRHYB9A7034CM 100 kRads (Si)

IRHYB9A3034CM 300 kRads (Si)

30A*

19m

Low-Ohmic

TO-257AA Tabless

Description

Features



Low RDS(on)

IR HiRel R9 technology provides superior power MOSFETs

for space applications. These devices have improved

immunity to Single Event Effect (SEE) and have been

characterized for useful performance with Linear Energy

Transfer (LET) up to 90MeV/(mg/cm²). Their combination of

low RDS(on) and faster switching times reduces the power

losses and increases power density in today’s high speed

switching applications such as DC-DC converters and motor

controllers. These devices retain all of the well established

advantages of MOSFETs such as voltage control, fast

switching, ease of paralleling and temperature stability of

electrical parameters.

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Hermetically Sealed

Electrically Isolated

Ceramic Eyelets

Light Weight

ESD Rating: Class 2 per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Parameter

Value

Units

I_D1@ V_GS= 12V, T_C= 25°C

Continuous Drain Current

30*

I_D2@ V_GS= 12V, T_C= 100°C

I_DM@ T_C= 25°C

Continuous Drain Current

Pulsed Drain Current 

120

P_D@ T_C= 25°C

Maximum Power Dissipation

W/°C

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

0.6

± 20

784

V_GS

E_AS

I_AR

E_AR

dv/dt

T_J

7.5

9.5

V/ns

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

-55 to + 150

T_STG

°C

300 (0.063 in./1.6mm from case for 10s)

4.3 (Typical)

Weight

* Current is limited by package

For Footnotes, refer to the page 2.

2021-03-26

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7...9

中文翻译

下载PDF

与JANSR2N7647D5相关器件

型号	品牌	获取价格	描述	数据表
JANSR2N7647T3	INFINEON	获取价格	Rad hard, 60V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257A
JANSR2N7647U3	INFINEON	获取价格	Rad hard, 60V, 40A, single, N-channel MOSFET, R9 in a SMD-0.5 package - SMD-0.5, 100 krad
JANSR2N7647U3C	INFINEON	获取价格	Rad hard, 60V, 40A, single, N-channel MOSFET, R9 in a SMD-0.5 (ceramic lid) package - SMD-
JANSR2N7648D5	INFINEON	获取价格	Rad hard, 100V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic package
JANSR2N7648T3	INFINEON	获取价格	Slash sheet Similar Parts
JANSR2N7648U3	INFINEON	获取价格	Rad hard, 100V, 35A, single, N-channel MOSFET, R9 in a SMD-0.5 package - SMD-0.5, 100 krad
JANSR2N7648U3C	INFINEON	获取价格	Rad hard, 100V, 22A, single, N-channel MOSFET, R9 in a SMD-0.5 (ceramic lid) package - SMD
JANSR2N7649D5	INFINEON	获取价格	Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257
JANSR2N7649T3	INFINEON	获取价格	Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257
JANSR2N7649U3	INFINEON	获取价格	Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a SMD-0.5 package - SMD-0.5, 100 krad

与JANSR2N7647D5相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

9
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

35
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

JANSR2N7647D5

JANSR2N7647D5 数据手册

与JANSR2N7647D5相关器件

与JANSR2N7647D5相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

JANSR2N7647D5

JANSR2N7647D5 数据手册

与JANSR2N7647D5相关器件

与JANSR2N7647D5相关文章

您还可以找

您在本页遇到什么问题？