Datasheet > JANSR2N7647U3C

JANSR2N7647U3C

更新时间： 2024-11-22 14:56:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	1206K
描述
Rad hard, 60V, 40A, single, N-channel MOSFET, R9 in a SMD-0.5 (ceramic lid) package - SMD-0.5, 100 krad TID, QPL

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JANSR2N7647U3C 数据手册

PD-97961A

IRHNJC9A7034

JANSR2N7647U3C

60V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-0.5)(Ceramic Lid)

^REF:R^{MIL-PRF-19500/775}

9^TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

I_D

QPL Part Number

JANSR2N7647U3C

JANSF2N7647U3C

IRHNJC9A7034 100 kRads (Si)

IRHNJC9A3034 300 kRads (Si)

40A*

18m

SMD-0.5 (Ceramic Lid)

Description

Features



Low RDS(on)

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Hermetically Sealed

Ceramic package

Light Weight

Surface Mount

ESD Rating: Class 2 per MIL-STD-750,

Method 1020

IR HiRel R9 technology provides superior power MOSFETs

for space applications. These devices have improved

immunity to Single Event Effect (SEE) and have been

characterized for useful performance with Linear Energy

Transfer (LET) up to 90MeV/(mg/cm²). Their combination of

low RDS(on) and faster switching times reduces the power

losses and increases power density in today’s high speed

switching applications such as DC-DC converters and motor

controllers. These devices retain all of the well established

advantages of MOSFETs such as voltage control, fast

switching, ease of paralleling and temperature stability of

electrical parameters.

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Parameter

Value

Units

I_D1@ V_GS= 12V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= 12V, T_C= 100°C Continuous Drain Current

40*

I_DM@ T_C= 25°C

P_D@ T_C= 25°C

Pulsed Drain Current 

160

Maximum Power Dissipation

W/°C

Linear Derating Factor

0.6

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

Single Pulse Avalanche Energy 

Avalanche Current 

840

7.5

E_AR

dv/dt

T_J

V/ns

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

-55 to + 150

T_STG

Storage Temperature Range

°C

Package Mounting Surface Temperature

Weight

300 (for 5s)

1.0 (Typical)

* Current is limited by package

For Footnotes, refer to the page 2.

2021-03-26

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7...9

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与JANSR2N7647U3C相关器件

型号	品牌	获取价格	描述	数据表
JANSR2N7648D5	INFINEON	获取价格	Rad hard, 100V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic package
JANSR2N7648T3	INFINEON	获取价格	Slash sheet Similar Parts
JANSR2N7648U3	INFINEON	获取价格	Rad hard, 100V, 35A, single, N-channel MOSFET, R9 in a SMD-0.5 package - SMD-0.5, 100 krad
JANSR2N7648U3C	INFINEON	获取价格	Rad hard, 100V, 22A, single, N-channel MOSFET, R9 in a SMD-0.5 (ceramic lid) package - SMD
JANSR2N7649D5	INFINEON	获取价格	Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257
JANSR2N7649T3	INFINEON	获取价格	Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257
JANSR2N7649U3	INFINEON	获取价格	Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a SMD-0.5 package - SMD-0.5, 100 krad
JANSR2N7650U8C	INFINEON	获取价格	Rad hard, 60V, 25A, single, N-channel MOSFET, R9 in a SMD-0.2C package - SMD-0.2C, 100 kra
JANSR2N7651U8C	INFINEON	获取价格	Rad hard, 100V, 23A, single, N-channel MOSFET, R9 in a SMD-0.2C package - SMD-0.2C, 100 kr
JANSR2N7652T1	INFINEON	获取价格	Rad hard, 60V, 45A, single, N-channel MOSFET, R9 in a TO-254AA Low Ohmic package - TO-254A

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