Datasheet > JANSR2N7648U3C

JANSR2N7648U3C

更新时间： 2024-11-19 14:56:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	494K
描述
Rad hard, 100V, 22A, single, N-channel MOSFET, R9 in a SMD-0.5 (ceramic lid) package - SMD-0.5, 100 krad TID, QPL

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

JANSR2N7648U3C 数据手册

PD-97911

IRHNJC9A7130

JANSR2N7648U3C

100V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-0.5) (Ceramic Lid)

^REF:R^{MIL-PRF-19500/775}

9^TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

QPL Part Number

I_D

IRHNJC9A7130 100 kRads (Si)

IRHNJC9A3130 300 kRads (Si)

35A JANSR2N7648U3C

35A JANSF2N7648U3C

34m

SMD-0.5 (Ceramic Lid)

Description

Features

 Low RDS(on)

IR HiRel R9 technology provides superior power MOSFETs

for space applications. These devices have improved

immunity to Single Event Effect (SEE) and have been

characterized for useful performance with Linear Energy

Transfer (LET) up to 90MeV/(mg/cm²). Their combination of

low RDS(on) and faster switching times reduces the power

losses and increases power density in today’s high speed

switching applications such as DC-DC converters and motor

controllers. These devices retain all of the well established

advantages of MOSFETs such as voltage control, fast

switching, ease of paralleling and temperature stability of

electrical parameters.

 Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

 Ceramic package

 Light Weight

 Surface Mount

 ESD Rating: Class 2 per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Parameter

Value

Units

I_D1@ V_GS= 12V, T_C= 25°C

Continuous Drain Current

I_D2@ V_GS= 12V, T_C= 100°C

I_DM@T_C= 25°C

Continuous Drain Current

Pulsed Drain Current 

140

P_D@T_C= 25°C

Maximum Power Dissipation

W/°C

Linear Derating Factor

Gate-to-Source Voltage

0.6

± 20

605

V_GS

E_AS

I_AR

Single Pulse Avalanche Energy 

Avalanche Current 

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

7.5

V/ns

-55 to + 150

T_STG

Storage Temperature Range

Package Mounting Surface Temperature

Weight

°C

300 (for 5s)

1.0 (Typical)

For Footnotes, refer to the page 2.

2019-01-15

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7...9

中文翻译

下载PDF

与JANSR2N7648U3C相关器件

型号	品牌	获取价格	描述	数据表
JANSR2N7649D5	INFINEON	获取价格	Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257
JANSR2N7649T3	INFINEON	获取价格	Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257
JANSR2N7649U3	INFINEON	获取价格	Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a SMD-0.5 package - SMD-0.5, 100 krad
JANSR2N7650U8C	INFINEON	获取价格	Rad hard, 60V, 25A, single, N-channel MOSFET, R9 in a SMD-0.2C package - SMD-0.2C, 100 kra
JANSR2N7651U8C	INFINEON	获取价格	Rad hard, 100V, 23A, single, N-channel MOSFET, R9 in a SMD-0.2C package - SMD-0.2C, 100 kr
JANSR2N7652T1	INFINEON	获取价格	Rad hard, 60V, 45A, single, N-channel MOSFET, R9 in a TO-254AA Low Ohmic package - TO-254A
JANSR2N7652U2A	INFINEON	获取价格	Rad hard, 60V, 100A, single, N-Channel MOSFET, R9 in a SupIR-SMD package - SupIR-SMD, 100
JANSR2N7653U2A	INFINEON	获取价格	Rad hard, 100V, 100A, single, N-channel MOSFET, R9 in a SupIR-SMD package - SupIR-SMD, 100
JANSR2N7659D5	INFINEON	获取价格	Rad hard, -60V, -30A, single, P-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic package
JANSR2N7659T3	INFINEON	获取价格	Rad hard, -60V, -30A, single, P-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-25

与JANSR2N7648U3C相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

37

产品中心

服务支持

精选活动

关于我们

帮助中心

JANSR2N7648U3C

JANSR2N7648U3C 数据手册

与JANSR2N7648U3C相关器件

与JANSR2N7648U3C相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

JANSR2N7648U3C

JANSR2N7648U3C 数据手册

与JANSR2N7648U3C相关器件

与JANSR2N7648U3C相关文章

您还可以找

您在本页遇到什么问题？