Datasheet > JANSR2N7659U3CE

JANSR2N7659U3CE

更新时间： 2024-11-22 14:56:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	553K
描述
Rad hard, -60V, -32A, single, P-channel MOSFET, R9 in a SMD-0.5e Ceramic Lid package - SMD-0.5e (Ceramic Lid), 100 krad(Si) TID, QPL

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

JANSR2N7659U3CE 数据手册

IRHNKC9A97034 (JANSR2N7659U3CE)

Radiation Hardened Power MOSFET

PD-97997B

Surface Mount (SMD-0.5e Ceramic Lid)

-60V, -32A, P-channel, R9 Superjunction Technology

Product Summary

Features

•

Single event effect (SEE) hardened

•

BV_DSS: -60V

I_D: -32A

R_DS(on),max: 45m

Q_Gmax: 48nC

(up to LET of 91.3 MeV·cm²/mg)

•

Low R_DS(on)

Rugged SOA

REF: MIL-PRF-19500/780

Improved Avalanche Energy

Simple drive requirements

Hermetically sealed

Ceramic package

Light weight

Surface mount

ESD rating: Class 2 per MIL-STD-750, Method 1020

Potential Applications

SMD-0.5e (Ceramic Lid)

•

Power distribution

Latching current limiter

Motor drives

DC-DC converter

Product Validation

Qualified according to MIL-PRF-19500 for space applications

Description

IR HiRel R9 technology provides superior power MOSFETs for space applications. These devices have improved

immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy

Transfer (LET) up to 91.3 MeV·cm²/mg. Their combination of low R_DS(on)and improved SOA will allow for better

performance in applications such as Latching Current Limiters or Solid-State Power Controllers. These devices

retain all of the well-established advantages of MOSFETs such as voltage control, fast switching and temperature

stability of electrical parameters.

Ordering Information

Table 1

Part number

Ordering options

Package

Screening Level

COTS

TID Level

IRHNKC9A97034

JANSR2N7659U3CE

IRHNKC9A93034

JANSF2N7659U3CE

SMD-0.5e (Ceramic Lid)

100 krad(Si)

300 krad(Si)

JANS

COTS

JANS

Please read the Important Notice and Warnings at the end of this document

page 1 of 14

www.infineon.com/irhirel

2023-07-26

12 3 4 5 6 7...14

中文翻译

下载PDF

与JANSR2N7659U3CE相关器件

型号	品牌	获取价格	描述	数据表
JANSR2N7660D5	INFINEON	获取价格	Rad hard, -100V, -23A, single, P-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic packag
JANSR2N7660T3	INFINEON	获取价格	Rad hard, -100V, -23A, single, P-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic packag
JANSR2N7660U3CE	INFINEON	获取价格	Rad hard, -100V, -24A, single, P-channel MOSFET, R9 in a SMD-0.5e Ceramic Lid package - SM
JANSR2N7665U2A	INFINEON	获取价格	Rad hard, -100V, -91A, P-channel MOSFET, R9 in SupIR-SMD package - SupIR-SMD, 300 krad(Si)
JANSRH821	MICROSEMI	获取价格	Zener Diode, 6.2V V(Z), 4.84%, 0.5W, Silicon, DO-204AA, HERMETIC SEALED, GLASS, DO-7, 2 PI
JANSRH823	MICROSEMI	获取价格	Zener Diode, 6.2V V(Z), 4.84%, 0.5W, Silicon, DO-204AA, HERMETIC SEALED, GLASS, DO-7, 2 PI
JANSRH823A	MICROSEMI	获取价格	Zener Diode, 6.2V V(Z), 4.84%, 0.5W, Silicon, DO-204AA, HERMETIC SEALED, GLASS, DO-7, 2 PI
JANSRH825	MICROSEMI	获取价格	Zener Diode, 6.2V V(Z), 4.84%, 0.5W, Silicon, DO-204AA, HERMETIC SEALED, GLASS, DO-7, 2 PI
JANSRH825A	MICROSEMI	获取价格	Zener Diode, 6.2V V(Z), 4.84%, 0.5W, Silicon, DO-204AA, HERMETIC SEALED, GLASS, DO-7, 2 PI
JANSRH827	MICROSEMI	获取价格	Zener Diode, 6.2V V(Z), 4.84%, 0.5W, Silicon, DO-204AA, HERMETIC SEALED, GLASS, DO-7, 2 PI

与JANSR2N7659U3CE相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

31
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

22
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

51
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

50

产品中心

服务支持

精选活动

关于我们

帮助中心

JANSR2N7659U3CE

JANSR2N7659U3CE 数据手册

与JANSR2N7659U3CE相关器件

与JANSR2N7659U3CE相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

JANSR2N7659U3CE

JANSR2N7659U3CE 数据手册

与JANSR2N7659U3CE相关器件

与JANSR2N7659U3CE相关文章

您还可以找

您在本页遇到什么问题？