Datasheet > JANSR2N7652U2A

JANSR2N7652U2A

更新时间： 2024-11-06 14:56:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	1280K
描述
Rad hard, 60V, 100A, single, N-Channel MOSFET, R9 in a SupIR-SMD package - SupIR-SMD, 100 krad TID, QPL

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

JANSR2N7652U2A 数据手册

PD-97894B

IRHNS9A7064

JANSR2N7652U2A

60V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SupIR-SMD)

REF: MIL-PRF-19500/777

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

I_D

QPL Part Number

JANSR2N7652U2A

JANSF2N7652U2A

IRHNS9A7064

IRHNS9A3064

100 kRads (Si)

300 kRads (Si)

100A*

4.0m

SupIR-SMD

Description

Features

 Low RDS(on)

IR HiRel R9 technology provides superior power MOSFETs

for space applications. These devices have improved

immunity to Single Event Effect (SEE) and have been

characterized for useful performance with Linear Energy

Transfer (LET) up to 90MeV/(mg/cm²). Their combination of

low RDS(on) and faster switching times reduces the power

losses and increases power density in today’s high speed

switching applications such as DC-DC converters and motor

controllers. These devices retain all of the well established

advantages of MOSFETs such as voltage control, fast

switching temperature stability of electrical parameters.

 Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

 Ceramic Package

 Light Weight

 Surface Mount

 ESD Rating: Class 3B per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Parameter

Value

Units

I_D1@ V_GS= 12V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= 12V, T_C= 100°C Continuous Drain Current

100*

400

I_DM@ T_C= 25°C

P_D@ T_C= 25°C

Pulsed Drain Current 

Maximum Power Dissipation

250

W/°C

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

2.0

V_GS

E_AS

I_AR

± 20

4000

100

E_AR

dv/dt

T_J

V/ns

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

4.8

-55 to + 150

T_STG

°C

300 (for 5s)

3.3 (Typical)

Weight

* Current is limited by package

For Footnotes, refer to the page 2.

2021-03-08

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7...9

中文翻译

下载PDF

与JANSR2N7652U2A相关器件

型号	品牌	获取价格	描述	数据表
JANSR2N7653U2A	INFINEON	获取价格	Rad hard, 100V, 100A, single, N-channel MOSFET, R9 in a SupIR-SMD package - SupIR-SMD, 100
JANSR2N7659D5	INFINEON	获取价格	Rad hard, -60V, -30A, single, P-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic package
JANSR2N7659T3	INFINEON	获取价格	Rad hard, -60V, -30A, single, P-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-25
JANSR2N7659U3CE	INFINEON	获取价格	Rad hard, -60V, -32A, single, P-channel MOSFET, R9 in a SMD-0.5e Ceramic Lid package - SMD
JANSR2N7660D5	INFINEON	获取价格	Rad hard, -100V, -23A, single, P-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic packag
JANSR2N7660T3	INFINEON	获取价格	Rad hard, -100V, -23A, single, P-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic packag
JANSR2N7660U3CE	INFINEON	获取价格	Rad hard, -100V, -24A, single, P-channel MOSFET, R9 in a SMD-0.5e Ceramic Lid package - SM
JANSR2N7665U2A	INFINEON	获取价格	Rad hard, -100V, -91A, P-channel MOSFET, R9 in SupIR-SMD package - SupIR-SMD, 300 krad(Si)
JANSRH821	MICROSEMI	获取价格	Zener Diode, 6.2V V(Z), 4.84%, 0.5W, Silicon, DO-204AA, HERMETIC SEALED, GLASS, DO-7, 2 PI
JANSRH823	MICROSEMI	获取价格	Zener Diode, 6.2V V(Z), 4.84%, 0.5W, Silicon, DO-204AA, HERMETIC SEALED, GLASS, DO-7, 2 PI

与JANSR2N7652U2A相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

9
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

35
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

JANSR2N7652U2A

JANSR2N7652U2A 数据手册

与JANSR2N7652U2A相关器件

与JANSR2N7652U2A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

JANSR2N7652U2A

JANSR2N7652U2A 数据手册

与JANSR2N7652U2A相关器件

与JANSR2N7652U2A相关文章

您还可以找

您在本页遇到什么问题？