5秒后页面跳转
JANSR2N7647T3 PDF预览

JANSR2N7647T3

更新时间: 2024-11-19 14:56:19
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 1039K
描述
Rad hard, 60V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257AA Low Ohmic, 100 krad(Si) TID, QPL

JANSR2N7647T3 数据手册

 浏览型号JANSR2N7647T3的Datasheet PDF文件第2页浏览型号JANSR2N7647T3的Datasheet PDF文件第3页浏览型号JANSR2N7647T3的Datasheet PDF文件第4页浏览型号JANSR2N7647T3的Datasheet PDF文件第5页浏览型号JANSR2N7647T3的Datasheet PDF文件第6页浏览型号JANSR2N7647T3的Datasheet PDF文件第7页 
PD-97846A  
IRHYS9A7034CM  
JANSR2N7647T3  
60V, N-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (Low-Ohmic TO-257AA)  
REF: MIL-PRF-19500/775  
TECHNOLOGY  
R
9
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
QPL Part Number  
IRHYS9A7034CM 100 kRads (Si)  
IRHYS9A3034CM 300 kRads (Si)  
30A* JANSR2N7647T3  
30A* JANSF2N7647T3  
19m  
19m  
Low-Ohmic  
TO-257AA  
Description  
Features  
Low RDS(on)  
IR HiRel R9 technology provides superior power MOSFETs  
for space applications. These devices have improved  
immunity to Single Event Effect (SEE) and have been  
characterized for useful performance with Linear Energy  
Transfer (LET) up to 90MeV/(mg/cm2). Their combination of  
low RDS(on) and faster switching times reduces the power  
losses and increases power density in todays high speed  
switching applications such as DC-DC converters and motor  
controllers. These devices retain all of the well established  
advantages of MOSFETs such as voltage control, fast  
switching, ease of paralleling and temperature stability of  
electrical parameters.  
Fast Switching  
Single Event Effect (SEE) Hardened  
Low Total Gate Charge  
Simple Drive Requirements  
Hermetically Sealed  
Electrically Isolated  
Ceramic Eyelets  
Light Weight  
ESD Rating: Class 2 per MIL-STD-750,  
Method 1020  
Absolute Maximum Ratings  
Pre-Irradiation  
Symbol  
Value  
Parameter  
Units  
ID1 @ VGS = 12V, TC = 25°C Continuous Drain Current  
ID2 @ VGS = 12V, TC = 100°C Continuous Drain Current  
30*  
A
28  
IDM @TC = 25°C  
PD @TC = 25°C  
Pulsed Drain Current   
120  
Maximum Power Dissipation  
75  
0.6  
W
W/°C  
V
Linear Derating Factor  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy   
Avalanche Current   
VGS  
EAS  
IAR  
± 20  
784  
mJ  
A
30  
EAR  
dv/dt  
TJ  
7.5  
mJ  
V/ns  
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt   
Operating Junction and  
Storage Temperature Range  
Lead Temperature  
9.5  
-55 to + 150  
TSTG  
°C  
g
300 (0.063 in./1.6mm from case for 10s)  
4.3 (Typical)  
Weight  
* Current is limited by package  
For Footnotes, refer to the page 2.  
1
2020-05-18  
International Rectifier HiRel Products, Inc.  

与JANSR2N7647T3相关器件

型号 品牌 获取价格 描述 数据表
JANSR2N7647U3 INFINEON

获取价格

Rad hard, 60V, 40A, single, N-channel MOSFET, R9 in a SMD-0.5 package - SMD-0.5, 100 krad
JANSR2N7647U3C INFINEON

获取价格

Rad hard, 60V, 40A, single, N-channel MOSFET, R9 in a SMD-0.5 (ceramic lid) package - SMD-
JANSR2N7648D5 INFINEON

获取价格

Rad hard, 100V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic package
JANSR2N7648T3 INFINEON

获取价格

Slash sheet Similar Parts
JANSR2N7648U3 INFINEON

获取价格

Rad hard, 100V, 35A, single, N-channel MOSFET, R9 in a SMD-0.5 package - SMD-0.5, 100 krad
JANSR2N7648U3C INFINEON

获取价格

Rad hard, 100V, 22A, single, N-channel MOSFET, R9 in a SMD-0.5 (ceramic lid) package - SMD
JANSR2N7649D5 INFINEON

获取价格

Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257
JANSR2N7649T3 INFINEON

获取价格

Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257
JANSR2N7649U3 INFINEON

获取价格

Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a SMD-0.5 package - SMD-0.5, 100 krad
JANSR2N7650U8C INFINEON

获取价格

Rad hard, 60V, 25A, single, N-channel MOSFET, R9 in a SMD-0.2C package - SMD-0.2C, 100 kra