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JANSR2N7625T3

更新时间: 2024-11-05 19:47:55
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 974K
描述
Power Field-Effect Transistor,

JANSR2N7625T3 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.76
Base Number Matches:1

JANSR2N7625T3 数据手册

 浏览型号JANSR2N7625T3的Datasheet PDF文件第2页浏览型号JANSR2N7625T3的Datasheet PDF文件第3页浏览型号JANSR2N7625T3的Datasheet PDF文件第4页浏览型号JANSR2N7625T3的Datasheet PDF文件第5页浏览型号JANSR2N7625T3的Datasheet PDF文件第6页浏览型号JANSR2N7625T3的Datasheet PDF文件第7页 
PD-97292E  
IRHLYS797034CM  
JANSR2N7625T3  
60V, P-CHANNEL  
RADIATION HARDENED  
LOGIC LEVEL POWER MOSFET  
THRU-HOLE (Low –Ohmic TO-257AA)  
REF: MIL-PRF-19500/757  
TECHNOLOGY  
R
7
Product Summary  
Part Number  
Radiation Level RDS(on)  
ID  
QPL Part Number  
JANSR2N7625T3  
JANSF2N7625T3  
IRHLYS797034CM 100k Rads(Si)  
IRHLYS793034CM 300k Rads(Si)  
-20A*  
-20A*  
0.074  
0.074  
Low-Ohmic  
TO-257AA  
Description  
Features  
IR HiRel R7 Logic Level Power MOSFETs provide simple  
solution to interfacing CMOS and TTL control circuits to  
power devices in space and other radiation environments.  
The threshold voltage remains within acceptable operating  
limits over the full operating temperature and post radiation.  
This is achieved while maintaining single event gate rupture  
and single event burnout immunity.  
The device is ideal when used to interface directly with  
most logic gates, linear ICs, micro-controllers, and other  
device types that operate from a 3.3-5V source. It may also  
be used to increase the output current of a PWM, voltage  
comparator or an operational amplifier where the logic level  
drive signal is available.  
5V CMOS and TTL Compatible  
Fast Switching  
Single Event Effect (SEE) Hardened  
Low Total Gate Charge  
Simple Drive Requirements  
Electrically Isolated  
Hermetically Sealed  
Light Weight  
Complimentary N-Channel Available - IRHLYS77034CM  
ESD Rating: Class 1C per MIL-STD-750, Method 1020  
Absolute Maximum Ratings  
Pre-Irradiation  
Symbol  
Value  
Parameter  
Units  
ID1 @ VGS = -4.5V, TC = 25°C Continuous Drain Current  
ID2 @ VGS = -4.5V, TC = 100°C Continuous Drain Current  
-20*  
A
-16.6  
IDM @ TC = 25°C  
PD @ TC = 25°C  
Pulsed Drain Current   
-80  
Maximum Power Dissipation  
75  
W
Linear Derating Factor  
0.6  
± 10  
W/°C  
V
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy   
Avalanche Current   
181  
mJ  
A
-20  
EAR  
dv/dt  
TJ  
7.5  
mJ  
V/ns  
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt   
Operating Junction and  
-10.9  
-55 to + 150  
TSTG  
Storage Temperature Range  
°C  
g
Package Mounting Surface Temp. 300 (0.063 in. / 1.6mm from case for 10s)  
Weight 4.3 (Typical)  
* Current is limited by package  
For Footnotes, refer to the page 2.  
1
2020-03-02  
International Rectifier HiRel Products, Inc.  

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