PD-96990C
IRHNA67264
JANSR2N7585U2
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
250V, N-CHANNEL
REF: MIL-PRF-19500/760
TECHNOLOGY
R
6
Product Summary
Part Number
IRHNA67264
IRHNA63264
Radiation Level RDS(on)
ID
QPL Part Number
JANSR2N7585U2
JANSF2N7585U2
100 kRads(Si)
300 kRads(Si)
50A
50A
0.040
0.040
SMD-2
Features
Description
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Hermetically Sealed
Electrically Isolated
Ceramic Package
Light Weight
Surface Mount
IR HiRel R6 technology provides high performance power
MOSFETs for space applications. These devices have
been characterized for both Total Dose and Single Event
Effect (SEE) with useful performance up to LET of
90 (MeV/(mg/cm2). The combination of low RDS(on) and
low gate charge reduces the power losses in switching
applications such as DC-DC converters and motor
controllers. These devices retain all of the well established
advantages of MOSFETs such as voltage control, fast
switching and temperature stability of electrical parameters.
ESD Rating: Class 3A per MIL-STD-750, Method 1020
Absolute Maximum Ratings
Pre-Irradiation
Symbol
Value
Parameter
Units
ID1 @ VGS = 12V, TC = 25°C Continuous Drain Current
ID2 @ VGS = 12V, TC = 100°C Continuous Drain Current
50
A
31.5
200
250
2.0
±20
240
50
IDM @ TC = 25°C
PD @TC = 25°C
Pulsed Drain Current
W
W/°C
V
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
VGS
EAS
IAR
mJ
A
mJ
V/ns
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
25
5.0
-55 to + 150
TSTG
°C
g
300 (for 5s)
3.3 (Typical)
Weight
For Footnotes, refer to the page 2.
1
2018-10-26
International Rectifier HiRel Products, Inc.