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JANSR2N7585U2 PDF预览

JANSR2N7585U2

更新时间: 2023-06-19 14:26:23
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 465K
描述
Rad hard, 250V, 31.5A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si) TID, QPL

JANSR2N7585U2 数据手册

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PD-96990C  
IRHNA67264  
JANSR2N7585U2  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT (SMD-2)  
250V, N-CHANNEL  
REF: MIL-PRF-19500/760  
TECHNOLOGY  
R
6
Product Summary  
Part Number  
IRHNA67264  
IRHNA63264  
Radiation Level RDS(on)  
ID  
QPL Part Number  
JANSR2N7585U2  
JANSF2N7585U2  
100 kRads(Si)  
300 kRads(Si)  
50A  
50A  
0.040  
0.040  
Features  
Description  
Single Event Effect (SEE) Hardened  
Low RDS(on)  
Low Total Gate Charge  
Simple Drive Requirements  
Hermetically Sealed  
Electrically Isolated  
Ceramic Package  
Light Weight  
Surface Mount  
IR HiRel R6 technology provides high performance power  
MOSFETs for space applications. These devices have  
been characterized for both Total Dose and Single Event  
Effect (SEE) with useful performance up to LET of  
90 (MeV/(mg/cm2). The combination of low RDS(on) and  
low gate charge reduces the power losses in switching  
applications such as DC-DC converters and motor  
controllers. These devices retain all of the well established  
advantages of MOSFETs such as voltage control, fast  
switching and temperature stability of electrical parameters.  
ESD Rating: Class 3A per MIL-STD-750, Method 1020  
Absolute Maximum Ratings  
Pre-Irradiation  
Symbol  
Value  
Parameter  
Units  
ID1 @ VGS = 12V, TC = 25°C Continuous Drain Current  
ID2 @ VGS = 12V, TC = 100°C Continuous Drain Current  
50  
A
31.5  
200  
250  
2.0  
±20  
240  
50  
IDM @ TC = 25°C  
PD @TC = 25°C  
Pulsed Drain Current  
W
W/°C  
V
Maximum Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy   
Avalanche Current   
VGS  
EAS  
IAR  
mJ  
A
mJ  
V/ns  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt   
Operating Junction and  
Storage Temperature Range  
Lead Temperature  
25  
5.0  
-55 to + 150  
TSTG  
°C  
g
300 (for 5s)  
3.3 (Typical)  
Weight  
For Footnotes, refer to the page 2.  
1
2018-10-26  
International Rectifier HiRel Products, Inc.  

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