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JANSR2N7580T1 PDF预览

JANSR2N7580T1

更新时间: 2024-11-19 14:56:15
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网脉冲晶体管
页数 文件大小 规格书
9页 529K
描述
Rad hard, 100V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 100 krad(Si) TID, QPL

JANSR2N7580T1 技术参数

生命周期:Active包装说明:FLANGE MOUNT, S-XSFM-P3
Reach Compliance Code:compliant风险等级:5.74
雪崩能效等级(Eas):512 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (ID):45 A最大漏源导通电阻:0.011 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-254AA
JESD-30 代码:S-XSFM-P3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:UNSPECIFIED封装形状:SQUARE
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):180 A认证状态:Qualified
参考标准:MIL-19500表面贴装:NO
端子形式:PIN/PEG端子位置:SINGLE
晶体管元件材料:SILICONBase Number Matches:1

JANSR2N7580T1 数据手册

 浏览型号JANSR2N7580T1的Datasheet PDF文件第2页浏览型号JANSR2N7580T1的Datasheet PDF文件第3页浏览型号JANSR2N7580T1的Datasheet PDF文件第4页浏览型号JANSR2N7580T1的Datasheet PDF文件第5页浏览型号JANSR2N7580T1的Datasheet PDF文件第6页浏览型号JANSR2N7580T1的Datasheet PDF文件第7页 
PD-94723G  
IRHMS67160  
JANSR2N7580T1  
100V, N-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (Low-Ohmic TO-254AA)  
REF: MIL-PRF-19500/753  
TECHNOLOGY  
R
6
Product Summary  
Part Number  
IRHMS67160  
IRHMS63160  
Radiation Level RDS(on)  
ID  
QPL Part Number  
JANSR2N7580T1  
JANSF2N7580T1  
100 kRads(Si)  
300 kRads(Si)  
45A*  
45A*  
0.011  
0.011  
Description  
Features  
Low RDS(on)  
Fast Switching  
Single Event Effect (SEE) Hardened  
Low Total Gate Charge  
Simple Drive Requirements  
Hermetically Sealed  
Ceramic Eyelets  
Electrically Isolated  
Light Weight  
ESD Rating: Class 3A per MIL-STD-750, Method 1020  
IRHMS67160 is part of the International Rectifier HiRel  
family of products. IR HiRel R6 technology provides high  
performance power MOSFETs for space applications.  
These devices have been characterized for both Total  
Dose and Single Event Effect (SEE) with useful  
performance up to LET of 90 (MeV/(mg/cm2). The  
combination of low RDS(on) and low gate charge reduces  
the power losses in switching applications such as DC-DC  
converters and motor controllers. These devices retain all  
of the well established advantages of MOSFETs such as  
voltage control, fast switching and temperature stability of  
electrical parameters.  
Absolute Maximum Ratings  
Pre-Irradiation  
Symbol  
Value  
Parameter  
Units  
45*  
ID1 @ VGS = 4.5V, TC = 25°C  
Continuous Drain Current  
45*  
180  
208  
1.67  
A
ID2 @ VGS = 4.5V, TC = 100°C Continuous Drain Current  
IDM @ TC = 25°C  
PD @TC = 25°C  
Pulsed Drain Current  
W
W/°C  
V
Maximum Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy   
Avalanche Current   
± 20  
512  
VGS  
EAS  
IAR  
mJ  
A
45  
20.8  
mJ  
V/ns  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt   
Operating Junction and  
Storage Temperature Range  
Lead Temperature  
6.3  
-55 to + 150  
TSTG  
°C  
g
300 (0.063 in. /1.6 mm from case for 10s)  
9.3 (Typical)  
Weight  
*Current is limited by package  
For footnotes refer to the page 2.  
1
2018-07-30  
International Rectifier HiRel Products, Inc.  

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