Datasheet > JANSR2N7580T1

JANSR2N7580T1

更新时间： 2023-12-06 20:12:23

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网脉冲晶体管
页数	文件大小	规格书
9页	529K
描述
Rad hard, 100V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 100 krad(Si) TID, QPL

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JANSR2N7580T1 数据手册

PD-94723G

IRHMS67160

JANSR2N7580T1

100V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (Low-Ohmic TO-254AA)

REF: MIL-PRF-19500/753

TECHNOLOGY

Product Summary

Part Number

IRHMS67160

IRHMS63160

Radiation Level RDS(on)

I_D

QPL Part Number

JANSR2N7580T1

JANSF2N7580T1

100 kRads(Si)

300 kRads(Si)

45A*

0.011

Low-Ohmic

TO-254AA

Description

Features

 Low RDS(on)

 Fast Switching

 Single Event Effect (SEE) Hardened

 Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

 Ceramic Eyelets

 Electrically Isolated

 Light Weight

 ESD Rating: Class 3A per MIL-STD-750, Method 1020

IRHMS67160 is part of the International Rectifier HiRel

family of products. IR HiRel R6 technology provides high

performance power MOSFETs for space applications.

These devices have been characterized for both Total

Dose and Single Event Effect (SEE) with useful

performance up to LET of 90 (MeV/(mg/cm²). The

combination of low RDS(on) and low gate charge reduces

the power losses in switching applications such as DC-DC

converters and motor controllers. These devices retain all

of the well established advantages of MOSFETs such as

voltage control, fast switching and temperature stability of

electrical parameters.

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Value

Parameter

Units

45*

I_D1@ V_GS= 4.5V, T_C= 25°C

Continuous Drain Current

45*

180

208

1.67

I_D2@ V_GS= 4.5V, T_C= 100°C Continuous Drain Current

I_DM@ T_C= 25°C

P_D@T_C= 25°C

Pulsed Drain Current 

W/°C

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

± 20

512

V_GS

E_AS

I_AR

20.8

V/ns

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

6.3

-55 to + 150

T_STG

°C

300 (0.063 in. /1.6 mm from case for 10s)

9.3 (Typical)

Weight

*Current is limited by package

For footnotes refer to the page 2.

2018-07-30

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7...9

中文翻译

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与JANSR2N7580T1相关器件

型号	品牌	获取价格	描述	数据表
JANSR2N7581U2	INFINEON	获取价格	Rad hard, 150V, 49A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si)
JANSR2N7581U2A	INFINEON	获取价格	Rad hard, 150V, 56A, single, N-channel MOSFET, R6 in a SupIR-SMD package - SupIR-SMD, 100
JANSR2N7582T1	INFINEON	获取价格	Rad hard, 150V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254
JANSR2N7583U2	INFINEON	获取价格	Rad hard, 200V, 40A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si)
JANSR2N7583U2A	INFINEON	获取价格	Rad hard, 200V, 56A, single, N-channel MOSFET, R6 in a SupIR-SMD package - SupIR-SMD, 100
JANSR2N7584D4	INFINEON	获取价格	Rad hard, 200V, 35A, single, N-channel MOSFET, R6 in a TO-254AA Tabless Low Ohmic package
JANSR2N7584T1	INFINEON	获取价格	Rad hard, 200V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254
JANSR2N7585U2	INFINEON	获取价格	Rad hard, 250V, 31.5A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(S
JANSR2N7585U2A	INFINEON	获取价格	Rad hard, 250V, 50A, single, N-channel MOSFET, R6 in a SupIR-SMD package - SupIR-SMD, 100
JANSR2N7586T1	INFINEON	获取价格	Rad hard, 250V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254

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