Datasheet > JANSR2N7550U2S

JANSR2N7550U2S

更新时间： 2024-11-22 14:53:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	1301K
描述
Rad hard, -100V, -47A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si) TID, QPL

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JANSR2N7550U2S 数据手册

PD-94493F

IRHNA597160

JANSR2N7550U2

100V, P-CHANNEL

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-2)

REF: MIL-PRF-19500/713

TECHNOLOGY

Product Summary

Part Number

IRHNA597160

IRHNA593160

Radiation Level

100 kRads(Si)

300 kRads(Si)

RDS(on)

0.049

I_D

-47A JANSR2N7550U2

-47A JANSF2N7550U2

QPL Part Number

SMD-2

Description

Features

 Single Event Effect (SEE) Hardened

 Ultra Low RDS(on)

 Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

 Surface Mount

IR HiRel R5 technology provides high performance power

MOSFETs for space applications. These devices have

been characterized for Single Event Effects (SEE) with

useful performance up to an LET of 80 (MeV/(mg/cm²)).

The combination of low RDS(on) and low gate charge

reduces the power losses in switching applications such as

DC to DC converters and motor control. These devices

retain all of the well established advantages of MOSFETs

such as voltage control, fast switching and temperature

stability of electrical parameters.

 Ceramic Package

 Light Weight

 ESD Rating: Class 3A per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Value

Parameter

Units

I_D1@ V_GS= -12V, T_C= 25°C

I_D2@ V_GS= -12V, T_C= 100°C

I_DM@ T_C= 25°C

Continuous Drain Current

Pulsed Drain Current 

Maximum Power Dissipation

-47

-30

-188

250

2.0

W/°C

P_D@T_C= 25°C

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

V_GS

E_AS

I_AR

± 20

400

-47

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

V/ns

-10

-55 to + 150

T_STG

°C

300 (for 5sec)

3.3 (Typical)

Weight

For Footnotes, refer to the page 2.

2020-11-09

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7 8

中文翻译

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与JANSR2N7550U2S相关器件

型号	品牌	获取价格	描述	数据表
JANSR2N7555U3	INFINEON	获取价格	Rad hard, 250V, 10A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad
JANSR2N7556T3	INFINEON	获取价格	Rad hard, 250V, 10A, single, N-channel MOSFET, R5 in a TO-257AA package - TO-257AA, 100 kr
JANSR2N7561T2	INFINEON	获取价格	Rad hard, 250V, 5.4A, single, N-channel MOSFET, R5 in a TO-205AF package - TO-205AF, 100 k
JANSR2N7579U2	INFINEON	获取价格	Rad hard, 100V, 56A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si)
JANSR2N7579U2A	INFINEON	获取价格	Rad hard, 100V, 56A, single, N-channel MOSFET, R6 in a SupIR-SMD package - SupIR-SMD, 100
JANSR2N7580T1	INFINEON	获取价格	Rad hard, 100V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254
JANSR2N7581U2	INFINEON	获取价格	Rad hard, 150V, 49A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si)
JANSR2N7581U2A	INFINEON	获取价格	Rad hard, 150V, 56A, single, N-channel MOSFET, R6 in a SupIR-SMD package - SupIR-SMD, 100
JANSR2N7582T1	INFINEON	获取价格	Rad hard, 150V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254
JANSR2N7583U2	INFINEON	获取价格	Rad hard, 200V, 40A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si)

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