Datasheet > JANSR2N7556T3

JANSR2N7556T3

更新时间： 2024-11-22 11:01:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	2397K
描述
Rad hard, 250V, 10A, single, N-channel MOSFET, R5 in a TO-257AA package - TO-257AA, 100 krad(Si) TID, QPL

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JANSR2N7556T3 数据手册

PD-93823D

IRHY57234CMSE

JANSR2N7556T3

250V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

THRU-HOLE(TO-257AA)

REF: MIL-PRF-19500/705

5^TECHNOLOGY

Product Summary

Part Number

Radiation Level

RDS(on)

I_D

QPL Part Number

IRHY57234CMSE 100 kRads(Si)

9.6A

JANSR2N7556T3

0.41

TO-257AA

Description

Features

IR HiRel R5 technology provides high performance power

MOSFETs for space applications. These devices have

been characterized for both Total Dose and Single Event

Effect (SEE) with useful performance up to LET of 80

(MeV/(mg/cm2). The combination of low RDS(on) and low

gate charge reduces the power losses in switching

applications such as DC-DC converters and motor

controllers. These devices retain all of the well established

advantages of MOSFETs such as voltage control, fast

switching, ease of paralleling and temperature stability of

electrical parameters.

 Single Event Effect (SEE) Hardened

 Low RDS(on)

 Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

 Ceramic Eyelets

 Light Weight

 ESD Rating: Class 1C per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Value

Parameter

Units

I_D1@ V_GS= 12V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= 12V, T_C= 100°C Continuous Drain Current

9.6

6.0

38.4

I_DM@T_C= 25°C

P_D@T_C= 25°C

Pulsed Drain Current 

W/°C

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

0.6

± 20

V_GS

E_AS

I_AR

9.6

7.5

2.4

V/ns

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

-55 to + 150

T_STG

°C

300 (0.063 in.(1.6mm) from case for 10s)

4.3 (Typical)

Weight

For Footnotes, refer to the page 2.

International Rectifier HiRel Products, Inc.

2019-03-19

12 3 4 5 6 7 8

中文翻译

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与JANSR2N7556T3相关器件

型号	品牌	获取价格	描述	数据表
JANSR2N7561T2	INFINEON	获取价格	Rad hard, 250V, 5.4A, single, N-channel MOSFET, R5 in a TO-205AF package - TO-205AF, 100 k
JANSR2N7579U2	INFINEON	获取价格	Rad hard, 100V, 56A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si)
JANSR2N7579U2A	INFINEON	获取价格	Rad hard, 100V, 56A, single, N-channel MOSFET, R6 in a SupIR-SMD package - SupIR-SMD, 100
JANSR2N7580T1	INFINEON	获取价格	Rad hard, 100V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254
JANSR2N7581U2	INFINEON	获取价格	Rad hard, 150V, 49A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si)
JANSR2N7581U2A	INFINEON	获取价格	Rad hard, 150V, 56A, single, N-channel MOSFET, R6 in a SupIR-SMD package - SupIR-SMD, 100
JANSR2N7582T1	INFINEON	获取价格	Rad hard, 150V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254
JANSR2N7583U2	INFINEON	获取价格	Rad hard, 200V, 40A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si)
JANSR2N7583U2A	INFINEON	获取价格	Rad hard, 200V, 56A, single, N-channel MOSFET, R6 in a SupIR-SMD package - SupIR-SMD, 100
JANSR2N7584D4	INFINEON	获取价格	Rad hard, 200V, 35A, single, N-channel MOSFET, R6 in a TO-254AA Tabless Low Ohmic package

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