Datasheet > JANSR2N7549U2A

JANSR2N7549U2A

更新时间： 2024-09-24 14:56:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	1138K
描述
Rad hard, -200V, 33A, single, P-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100 krad TID, QPL

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JANSR2N7549U2A 数据手册

PD-97938B

IRHNS597260

JANSR2N7549U2A

200V, P-CHANNEL

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SupIR-SMD)

^{REF: MIL}R^{-PRF-19500/713}

5^TECHNOLOGY

Product Summary

Part Number

Radiation Level RDS(on)

I_D

QPL Part Number

IRHNS597260

100 kRads(Si)

300 kRads(Si)

-33.5A

JANSR2N7549U2A

0.102

IRHNS593260

-33.5A

JANSF2N7549U2A

SupIR-SMD

Description

Features



Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Simple Drive Requirements

Hermetically Sealed

Ceramic Package

Light Weight

Surface Mount

ESD Rating: Class 3A per MIL-STD-750,

Method 1020

IR HiRel R5 technology provides high performance power

MOSFETs for space applications. These devices have

been characterized for both Total Dose and Single Event

Effect (SEE) with useful performance up to LET of 80

(MeV/(mg/cm²). The combination of low RDS(on) and low

gate charge reduces the power losses in switching

applications such as DC-DC converters and motor

controllers. These devices retain all of the well established

advantages of MOSFETs such as voltage control, fast

switching and temperature stability of electrical

parameters.

Absolute Maximum Ratings

Pre-Irradiation

Symbol

I_D1@ V_GS= -12V, T_C= 25°C

I_D2@ V_GS= -12V, T_C= 100°C

I_DM@ T_C= 25°C

Value

-33.5

-21

Parameter

Continuous Drain Current

Pulsed Drain Current 

Maximum Power Dissipation

Linear Derating Factor

Units

-134

250

P_D@ T_C= 25°C

W/°C

2.0

V_GS

Gate-to-Source Voltage

± 20

E_AS

I_AR

Single Pulse Avalanche Energy 

Avalanche Current 

303

-33.5

E_AR

dv/dt

T_J

V/ns

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

-10

-55 to + 150

T_STG

°C

300 (for 5s)

3.3 (Typical)

Weight

For Footnotes, refer to the page 2.

2020-04-13

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7 8

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与JANSR2N7549U2A相关器件

型号	品牌	获取价格	描述	数据表
JANSR2N7550D1	INFINEON	获取价格	Rad hard, -100V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Tabless SMD package - TO
JANSR2N7550T1	INFINEON	获取价格	Rad hard, -100V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-2
JANSR2N7550U2	INFINEON	获取价格	Rad hard, -100V, -47A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(S
JANSR2N7550U2A	INFINEON	获取价格	Rad hard, -100V, 47A, single, P-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100
JANSR2N7550U2S	INFINEON	获取价格	Rad hard, -100V, -47A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(S
JANSR2N7555U3	INFINEON	获取价格	Rad hard, 250V, 10A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad
JANSR2N7556T3	INFINEON	获取价格	Rad hard, 250V, 10A, single, N-channel MOSFET, R5 in a TO-257AA package - TO-257AA, 100 kr
JANSR2N7561T2	INFINEON	获取价格	Rad hard, 250V, 5.4A, single, N-channel MOSFET, R5 in a TO-205AF package - TO-205AF, 100 k
JANSR2N7579U2	INFINEON	获取价格	Rad hard, 100V, 56A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si)
JANSR2N7579U2A	INFINEON	获取价格	Rad hard, 100V, 56A, single, N-channel MOSFET, R6 in a SupIR-SMD package - SupIR-SMD, 100

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