Datasheet > JANSR2N7549U2

JANSR2N7549U2

更新时间： 2023-12-06 20:12:13

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	341K
描述
Rad hard, -200V, -35.5A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si) TID, QPL

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JANSR2N7549U2 数据手册

IRHNA597260

JANSR2N7549U2

Pre-Irradiation

1000

100

1000

100

OPERATION IN THIS AREA

LIMITED BY R (on)

T = 150 C



100 s

1ms

T = 25 C

10ms

Tc = 25°C

Tj = 150°C

Single Pulse

= 0 V

0.1

0.0

100

1000

1.5

3.0

4.5

6.0

-V ,Source-to-Drain Voltage (V)

-V

, Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode Forward Voltage

600

TOP

-15A

-21.2A

500

400

300

200

100

BOTTOM -33.5A

100

125

150

100

125

150

, Case Temperature (°C)

Starting T , Junction Temperature (°C)

Fig 9. Maximum Drain Current Vs. Case Temperature

Fig 10. Maximum Avalanche Energy

Vs. Drain Current

D = 0.50

0.20

0.1

0.10

0.05

0.02

SINGLE PULSE

0.01

( THERMAL RESPONSE )

0.01

Notes:

1. Duty Factor D = t1/t2

2. Peak T = P

x Z

+ Tc

thJC

0.001

1E-005

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

International Rectifier HiRel Products, Inc.

2017-12-21

1 2 3 456 7 8

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