Datasheet > JANSR2N7550T1

JANSR2N7550T1

更新时间： 2024-09-24 14:56:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	1228K
描述
Rad hard, -100V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 100 krad(Si) TID, QPL

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JANSR2N7550T1 数据手册

PD-94283H

IRHMS597160

JANSR2N7550T1

100V, P-CHANNEL

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (Low-Ohmic TO-254AA)

REF: MIL-PRF-19500/713

TECHNOLOGY

Product Summary

Part Number

IRHMS597160

IRHMS593160

Radiation Level

100 kRads(Si)

300 kRads(Si)

RDS(on)

0.05

I_D

QPL Part Number

JANSR2N7550T1

JANSF2N7550T1

-45A

0.05

Low-Ohmic

TO-254AA

Description

Features

 Single Event Effect (SEE) Hardened

IR HiRel R5 technology provides high performance power

MOSFETs for space applications. These devices have

been characterized for Single Event Effects (SEE) with

useful performance up to an LET of 80 (MeV/(mg/cm²)).

The combination of low RDS(on) and low gate charge

reduces the power losses in switching applications such as

DC to DC converters and motor control. These devices

retain all of the well established advantages of MOSFETs

such as voltage control, fast switching and temperature

stability of electrical parameters.

 Identical Pre- and Post-Electrical Test Conditions

 Repetitive Avalanche Ratings

 Dynamic dv/dt Ratings

 Simple Drive Requirements

 Hermetically Sealed

 Electrically Isolated

 Ceramic Eyelets

 Light Weight

 High Electrical Conductive Package

 ESD Rating: Class 3A per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Value

Parameter

Units

I_D1@ V_GS= -12V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= -12V, T_C= 100°C Continuous Drain Current

-45

-28.5

-180

208

I_DM@ T_C= 25°C

P_D@T_C= 25°C

Pulsed Drain Current 

Maximum Power Dissipation

W/°C

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

1.67

± 20

480

V_GS

E_AS

I_AR

-45

E_AR

dv/dt

T_J

20.8

-6.0

V/ns

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

-55 to + 150

T_STG

°C

300 ((0.063in./1.6mm from case for 10s)

9.3 (Typical)

Weight

For Footnotes, refer to the page 2.

2020-11-09

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7 8

中文翻译

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与JANSR2N7550T1相关器件

型号	品牌	获取价格	描述	数据表
JANSR2N7550U2	INFINEON	获取价格	Rad hard, -100V, -47A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(S
JANSR2N7550U2A	INFINEON	获取价格	Rad hard, -100V, 47A, single, P-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100
JANSR2N7550U2S	INFINEON	获取价格	Rad hard, -100V, -47A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(S
JANSR2N7555U3	INFINEON	获取价格	Rad hard, 250V, 10A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad
JANSR2N7556T3	INFINEON	获取价格	Rad hard, 250V, 10A, single, N-channel MOSFET, R5 in a TO-257AA package - TO-257AA, 100 kr
JANSR2N7561T2	INFINEON	获取价格	Rad hard, 250V, 5.4A, single, N-channel MOSFET, R5 in a TO-205AF package - TO-205AF, 100 k
JANSR2N7579U2	INFINEON	获取价格	Rad hard, 100V, 56A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si)
JANSR2N7579U2A	INFINEON	获取价格	Rad hard, 100V, 56A, single, N-channel MOSFET, R6 in a SupIR-SMD package - SupIR-SMD, 100
JANSR2N7580T1	INFINEON	获取价格	Rad hard, 100V, 45A, single, N-channel MOSFET, R6 in a TO-254AA Low Ohmic package - TO-254
JANSR2N7581U2	INFINEON	获取价格	Rad hard, 150V, 49A, single, N-channel MOSFET, R6 in a SMD-2 package - SMD-2, 100 krad(Si)

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