Datasheet > JANSR2N7523U2A

JANSR2N7523U2A

更新时间： 2024-09-24 14:56:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	1128K
描述
Rad hard, -30V, 56A, single, P-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100krad(Si) TID, QPL

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JANSR2N7523U2A 数据手册

PD-97963A

IRHNS597Z60

JANSR2N7523U2A

30V, P-CHANNEL

REF: MIL-PRF-19500/733

TECHNOLOGY

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SupIR-SMD)

Product Summary

Part Number

Radiation Level RDS(on)

I_D

QPL Part Number

IRHNS597Z60 100 kRads(Si)

-56A* JANSR2N7523U2A

0.013

-56A*

IRHNS593Z60

300 kRads(Si)

JANSF2N7523U2A

SupIR-SMD

Description

Features

 Single Event Effect (SEE) Hardened

 Ultra Low RDS(on)

 Low Total Gate Charge

 Proton Tolerant

 Simple Drive Requirements

 Hermetically Sealed

 Surface Mount

IR HiRel R5 technology provides high performance

power MOSFETs for space applications. These devices

have been characterized for both Total Dose and Single

Event Effect (SEE) with useful performance up to LET of

80 (MeV/(mg/cm²). The combination of low RDS(on) and

low gate charge reduces the power losses in switching

applications such as DC-DC converters and motor

controllers. These devices retain all of the well

established advantages of MOSFETs such as voltage

control, fast switching and temperature stability of

electrical parameters.

 Ceramic Package

 Light Weight

 ESD Rating Class 3A per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Value

Parameter

Units

I_D1@ V_GS= -12V, T_C= 25°C

Continuous Drain Current

-56*

-224

250

2.0

I_D2@ V_GS= -12V, T_C= 100°C Continuous Drain Current

I_DM@ T_C= 25°C

P_D@ T_C= 25°C

Pulsed Drain Current 

Maximum Power Dissipation

W/°C

Linear Derating Factor

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

1116

-56

Single Pulse Avalanche Energy 

Avalanche Current 

E_AR

dv/dt

T_J

V/ns

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

0.83

-55 to + 150

T_STG

Storage Temperature Range

Package Mounting Surface Temperature

Weight

°C

300 (for 5s)

3.3 (Typical)

* Current is limited by package

For Footnotes, refer to the page 2.

2021-04-22

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7 8

中文翻译

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与JANSR2N7523U2A相关器件

型号	品牌	获取价格	描述	数据表
JANSR2N7523U2S	INFINEON	获取价格	Rad hard, -30V, -56A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si
JANSR2N7524D4	INFINEON	获取价格	Rad hard, -60V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Tabless Low Ohmic package
JANSR2N7524T1	INFINEON	获取价格	Rad hard, -60V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-25
JANSR2N7524U2	INFINEON	获取价格	Rad hard, -60V, -56A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si
JANSR2N7524U2A	INFINEON	获取价格	Rad hard, -60V, 56A, single, P-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100
JANSR2N7524U2S	INFINEON	获取价格	Rad hard, -60V, -56A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si
JANSR2N7545U3	INFINEON	获取价格	Rad hard, -100V, -12.5A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100
JANSR2N7546U3	INFINEON	获取价格	Rad hard, -200V, -8.0A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 k
JANSR2N7547T3	INFINEON	获取价格	Rad hard, -100V, -12.5A, single, P-channel MOSFET, R5 in a TO-257AA package - TO-257AA, 10
JANSR2N7549T1	INFINEON	获取价格	Rad hard, -200V, -32A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-2

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