Datasheet > JANSR2N7519U3

JANSR2N7519U3

更新时间： 2024-11-06 14:56:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	987K
描述
Rad hard, -30V, -22A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, QPL

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

JANSR2N7519U3 数据手册

PD-94661D

IRHNJ597Z30

JANSR2N7519U3

30V, P-CHANNEL

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-0.5)

REF: MIL-PRF-19500/732

TECHNOLOGY

Product Summary

Part Number

IRHNJ597Z30

IRHNJ593Z30

Radiation Level RDS(on)

I_D

QPL Part Number

JANSR2N7519U3

JANSF2N7519U3

100 kRads(Si)

300 kRads(Si)

-22A*

0.070

SMD-0.5

Description

Features

 Single Event Effect (SEE) Hardened

 Low RDS(on)

 Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

 Ceramic Package

R HiRel R5 technology provides high performance power

MOSFETs for space applications. These devices have

been characterized for both Total Dose and Single Event

Effect (SEE) with useful performance up to LET of 80

(MeV/(mg/cm²). The combination of low RDS(on) and low

gate charge reduces the power losses in switching

applications such as DC-DC converters and motor

controllers. These devices retain all of the well established

advantages of MOSFETs such as voltage control, fast

switching and temperature stability of electrical

parameters.

 Light Weight

 Surface Mount

 ESD Rating: Class 1C per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Parameter

Value

Units

I_D1@ V_GS= -12V, T_C= 25°C

I_D2@ V_GS= -12V, T_C= 100°C

I_DM@ T_C= 25°C

Continuous Drain Current

Pulsed Drain Current 

Maximum Power Dissipation

-22*

-18

-88

W/°C

P_D@ T_C= 25°C

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

0.6

± 20

V_GS

E_AS

I_AR

152

-22

E_AR

dv/dt

T_J

7.5

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

V/ns

-1.57

-55 to + 150

T_STG

°C

300 (for 5s)

1.0 (Typical)

Weight

*Current is limited by package

For Footnotes refer to the page 2.

International Rectifier HiRel Products, Inc.

2020-11-09

12 3 4 5 6 7 8

中文翻译

下载PDF

与JANSR2N7519U3相关器件

型号	品牌	获取价格	描述	数据表
JANSR2N7520T3	INFINEON	获取价格	Rad hard, -60V, -20A, single, P-channel MOSFET, R5 in a TO-257AA Low Ohmic package - TO-25
JANSR2N7520U3	INFINEON	获取价格	Rad hard, -60V, -22A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 kra
JANSR2N7520U3C	INFINEON	获取价格	Rad hard, -60V, -22A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 kra
JANSR2N7523T1	INFINEON	获取价格	Rad hard, -30V, -45A, single, N-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-25
JANSR2N7523U2	INFINEON	获取价格	Rad hard, -30V, -56A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si
JANSR2N7523U2A	INFINEON	获取价格	Rad hard, -30V, 56A, single, P-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100k
JANSR2N7523U2S	INFINEON	获取价格	Rad hard, -30V, -56A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si
JANSR2N7524D4	INFINEON	获取价格	Rad hard, -60V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Tabless Low Ohmic package
JANSR2N7524T1	INFINEON	获取价格	Rad hard, -60V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-25
JANSR2N7524U2	INFINEON	获取价格	Rad hard, -60V, -56A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si

与JANSR2N7519U3相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

9
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

35
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

JANSR2N7519U3

JANSR2N7519U3 数据手册

与JANSR2N7519U3相关器件

与JANSR2N7519U3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

JANSR2N7519U3

JANSR2N7519U3 数据手册

与JANSR2N7519U3相关器件

与JANSR2N7519U3相关文章

您还可以找

您在本页遇到什么问题？