Datasheet > JANSR2N7545U3

JANSR2N7545U3

更新时间： 2024-11-22 14:56:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	2184K
描述
Rad hard, -100V, -12.5A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, QPL

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JANSR2N7545U3 数据手册

PD-94047D

IRHNJ597130

JANSR2N7545U3

100V, P-CHANNEL

REF: MIL-PRF-19500/712

RADIATION HARDENED

POWER MOSFET

TECHNOLOGY

SURFACE MOUNT (SMD-0.5)

Product Summary

Part Number

IRHNJ597130

IRHNJ593130

Radiation Level RDS(on)

I_D

QPL Part Number

JANSR2N7545U3

JANSF2N7545U3

100 kRads(Si)

300 kRads(Si)

-12.5A

0.205

SMD-0.5

Description

Features

 Single Event Effect (SEE) Hardened

 Low RDS(on)

 Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

 Electrically Isolated

 Ceramic Package

IR HiRel R5 technology provides high performance power

MOSFETs for space applications. These devices have

been characterized for both Total Dose and Single Event

Effect (SEE) with useful performance up to LET of 80

(MeV/(mg/cm²). The combination of low RDS(on) and low

gate charge reduces the power losses in switching

applications such as DC-DC converters and motor

controllers. These devices retain all of the well established

advantages of MOSFETs such as voltage control, fast

switching, ease of paralleling and temperature stability of

electrical parameters.

 Light Weight

 Surface Mount

 ESD Rating: Class 1B per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

I_D1@ V_GS= -12V, T_C= 25°C

I_D2@ V_GS= -12V, T_C= 100°C

I_DM@ T_C= 25°C

Value

Parameter

Continuous Drain Current

Pulsed Drain Current 

Maximum Power Dissipation

Units

-12.5

-8.0

-50

P_D@ T_C= 25°C

W/°C

Linear Derating Factor

0.6

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

Single Pulse Avalanche Energy 

Avalanche Current 

-12.5

7.5

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

V/ns

-6.2

-55 to + 150

T_STG

Storage Temperature Range

Package Mounting Surface Temperature

Weight

°C

300 (for 5s)

1.0 (Typical)

For Footnotes, refer to the page 2.

2019-02-25

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7 8

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与JANSR2N7545U3相关器件

型号	品牌	获取价格	描述	数据表
JANSR2N7546U3	INFINEON	获取价格	Rad hard, -200V, -8.0A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 k
JANSR2N7547T3	INFINEON	获取价格	Rad hard, -100V, -12.5A, single, P-channel MOSFET, R5 in a TO-257AA package - TO-257AA, 10
JANSR2N7549T1	INFINEON	获取价格	Rad hard, -200V, -32A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-2
JANSR2N7549U2	INFINEON	获取价格	Rad hard, -200V, -35.5A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad
JANSR2N7549U2A	INFINEON	获取价格	Rad hard, -200V, 33A, single, P-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100
JANSR2N7550D1	INFINEON	获取价格	Rad hard, -100V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Tabless SMD package - TO
JANSR2N7550T1	INFINEON	获取价格	Rad hard, -100V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-2
JANSR2N7550U2	INFINEON	获取价格	Rad hard, -100V, -47A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(S
JANSR2N7550U2A	INFINEON	获取价格	Rad hard, -100V, 47A, single, P-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100
JANSR2N7550U2S	INFINEON	获取价格	Rad hard, -100V, -47A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(S

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