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JANSR2N7549T1

更新时间: 2024-02-23 09:11:28
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 2285K
描述
Rad hard, -200V, -32A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 100 krad(Si) TID, QPL

JANSR2N7549T1 数据手册

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PD-94605G  
IRHMS597260  
JANSR2N7549T1  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (Low-Ohmic TO-254AA)  
200V, P-CHANNEL  
REF: MIL-PRF-19500/713  
TECHNOLOGY  
R
5
Product Summary  
Part Number  
IRHMS597260  
IRHMS593260  
Radiation Level  
100 kRads(Si)  
300 kRads(Si)  
RDS(on)  
0.103  
0.103  
ID  
QPL Part Number  
JANSR2N7549T1  
JANSF2N7549T1  
-30A  
-30A  
Low-Ohmic  
TO-254AA  
Description  
Features  
Low RDS(on)  
Fast Switching  
Single Event Effect (SEE) Hardened  
Low Total Gate Charge  
Simple Drive Requirements  
Hermetically Sealed  
Ceramic Eyelets  
Electrically Isolated  
Light Weight  
IR HiRel R5 technology provides high performance power  
MOSFETs for space applications. These devices have  
been characterized for Single Event Effects (SEE) with  
useful performance up to an LET of 80 (MeV/(mg/cm2)).  
The combination of low RDS(on) and low gate charge  
reduces the power losses in switching applications such as  
DC to DC converters and motor control. These devices  
retain all of the well established advantages of MOSFETs  
such as voltage control, fast switching and temperature  
stability of electrical parameters.  
ESD Rating: Class 3A per MIL-STD-750,  
.
Method 1020  
Absolute Maximum Ratings  
Pre-Irradiation  
Symbol  
Value  
Parameter  
Units  
ID1 @ VGS = -12V, TC = 25°C Continuous Drain Current  
ID2 @ VGS = -12V, TC = 100°C Continuous Drain Current  
-30  
A
-19  
-120  
208  
1.67  
± 20  
332  
-30  
IDM @ TC = 25°C  
PD @TC = 25°C  
Pulsed Drain Current  
W
W/°C  
V
Maximum Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy   
Avalanche Current   
VGS  
EAS  
IAR  
mJ  
A
mJ  
V/ns  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt   
Operating Junction and  
Storage Temperature Range  
Lead Temperature  
20.8  
-4.1  
-55 to + 150  
TSTG  
°C  
g
300 ((0.063in./1.6mm from case for 10s)  
9.3 (Typical)  
Weight  
For Footnotes, refer to the page 2.  
1
2019-01-15  
International Rectifier HiRel Products, Inc.  

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