PD-94605G
IRHMS597260
JANSR2N7549T1
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-254AA)
200V, P-CHANNEL
REF: MIL-PRF-19500/713
TECHNOLOGY
R
5
Product Summary
Part Number
IRHMS597260
IRHMS593260
Radiation Level
100 kRads(Si)
300 kRads(Si)
RDS(on)
0.103
0.103
ID
QPL Part Number
JANSR2N7549T1
JANSF2N7549T1
-30A
-30A
Low-Ohmic
TO-254AA
Description
Features
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Hermetically Sealed
Ceramic Eyelets
Electrically Isolated
Light Weight
IR HiRel R5 technology provides high performance power
MOSFETs for space applications. These devices have
been characterized for Single Event Effects (SEE) with
useful performance up to an LET of 80 (MeV/(mg/cm2)).
The combination of low RDS(on) and low gate charge
reduces the power losses in switching applications such as
DC to DC converters and motor control. These devices
retain all of the well established advantages of MOSFETs
such as voltage control, fast switching and temperature
stability of electrical parameters.
ESD Rating: Class 3A per MIL-STD-750,
.
Method 1020
Absolute Maximum Ratings
Pre-Irradiation
Symbol
Value
Parameter
Units
ID1 @ VGS = -12V, TC = 25°C Continuous Drain Current
ID2 @ VGS = -12V, TC = 100°C Continuous Drain Current
-30
A
-19
-120
208
1.67
± 20
332
-30
IDM @ TC = 25°C
PD @TC = 25°C
Pulsed Drain Current
W
W/°C
V
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
VGS
EAS
IAR
mJ
A
mJ
V/ns
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
20.8
-4.1
-55 to + 150
TSTG
°C
g
300 ((0.063in./1.6mm from case for 10s)
9.3 (Typical)
Weight
For Footnotes, refer to the page 2.
1
2019-01-15
International Rectifier HiRel Products, Inc.