Datasheet > JANSR2N7524U2A

JANSR2N7524U2A

更新时间： 2024-11-19 14:56:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	365K
描述
Rad hard, -60V, 56A, single, P-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100 krad TID, QPL

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JANSR2N7524U2A 数据手册

PD-97924A

IRHNS597064

JANSR2N7524U2A

60V, P-CHANNEL

REF: MIL-PRF-19500/733

RADIATION HARDENED

POWER MOSFET

TECHNOLOGY

SURFACE MOUNT (SupIR-SMD)

Product Summary

Part Number

IRHNS597064

IRHNS593064

Radiation Level RDS(on)

I_D

QPL Part Number

JANSR2N7524U2A

JANSF2N7524U2A

100 kRads(Si)

300 kRads(Si)

-56A

0.016

SupIR-SMD

Description

Features

 Single Event Effect (SEE) Hardened

 Low RDS(on)

 Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

 Ceramic Package

IR HiRel R5 technology provides high performance

power MOSFETs for space applications. These devices

have been characterized for both Total Dose and Single

Event Effect (SEE) with useful performance up to LET of

80(MeV/(mg/cm²). The combination of low RDS(on) and

low gate charge reduces the power losses in switching

applications such as DC-DC converters and motor

controllers. These devices retain all of the well

established advantages of MOSFETs such as voltage

control, fast switching and temperature stability of

electrical parameters.

 Light Weight

 Surface Mount

 ESD Rating: Class 3A per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Parameter

Pre-Irradiation

Units

I_D1@ V_GS= -12V, T_C= 25°C

I_D2@ V_GS= -12V, T_C= 100°C

I_DM@ T_C= 25°C

Continuous Drain Current

Pulsed Drain Current 

Maximum Power Dissipation

-56*

-224

250

2.0

P_D@ T_C= 25°C

W/°C

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

V_GS

E_AS

I_AR

± 20

725

-56

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

V/ns

-2.1

-55 to + 150

T_STG

°C

300 (for 5s)

3.3 (Typical)

Weight

* Current is limited by package

For Footnotes, refer to the page 2.

2019-06-06

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7 8

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与JANSR2N7524U2A相关器件

型号	品牌	获取价格	描述	数据表
JANSR2N7524U2S	INFINEON	获取价格	Rad hard, -60V, -56A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si
JANSR2N7545U3	INFINEON	获取价格	Rad hard, -100V, -12.5A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100
JANSR2N7546U3	INFINEON	获取价格	Rad hard, -200V, -8.0A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 k
JANSR2N7547T3	INFINEON	获取价格	Rad hard, -100V, -12.5A, single, P-channel MOSFET, R5 in a TO-257AA package - TO-257AA, 10
JANSR2N7549T1	INFINEON	获取价格	Rad hard, -200V, -32A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-2
JANSR2N7549U2	INFINEON	获取价格	Rad hard, -200V, -35.5A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad
JANSR2N7549U2A	INFINEON	获取价格	Rad hard, -200V, 33A, single, P-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100
JANSR2N7550D1	INFINEON	获取价格	Rad hard, -100V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Tabless SMD package - TO
JANSR2N7550T1	INFINEON	获取价格	Rad hard, -100V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-2
JANSR2N7550U2	INFINEON	获取价格	Rad hard, -100V, -47A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(S

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