Datasheet > JANSR2N7524T1

JANSR2N7524T1

更新时间： 2024-11-22 14:56:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	370K
描述
Rad hard, -60V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 100 krad(Si) TID, QPL

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JANSR2N7524T1 数据手册

PD-94713E

IRHMS597064

JANSR2N7524T1

60V, P-CHANNEL

REF: MIL-PRF-19500/733

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (Low Ohmic - TO-254AA)

TECHNOLOGY

Product Summary

Part Number

Radiation Level RDS(on)

I_D

QPL Part Number

JANSR2N7524T1

JANSF2N7524T1

IRHMS597064 100 kRads(Si)

-45A*

0.018

IRHMS593064

300 kRads(Si)

TO-254AA

Low Ohmic

Description

Features

 Single Event Effect (SEE) Hardened

 Fast Switching

IRHMS597064 is a part of the International Rectifier

HiRel family of products. IR HiRel R5 technology

provides high performance power MOSFETs for space

applications. These devices have been characterized

for both Total Dose and Single Event Effect (SEE) with

useful performance up to LET of 80 (MeV/(mg/cm²). The

combination of low RDS(on) and low gate charge reduces

the power losses in switching applications such as DC-

DC converters and motor controllers. These devices

retain all of the well established advantages of MOSFETs

such as voltage control, fast switching, ease of paralleling

and temperature stability of electrical parameters.

 Low RDS(on)

 Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

 Electrically Isolated

 Light Weight

 ESD Rating: Class 3A per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Parameter

Value

Units

-45*

I_D@ V_GS= -12V, T_C= 25°C Continuous Drain Current

I_D@ V_GS= -12V, T_C= 100°C Continuous Drain Current

-45*

-180

208

I_DM@ T_C= 25°C

P_D@ T_C= 25°C

Pulsed Drain Current 

W/°C

Maximum Power Dissipation

1.67

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

± 20

890

V_GS

E_AS

I_AR

-45

20.8

V/ns

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

-3.8

-55 to + 150

T_STG

°C

300 (0.063 in./1.6 mm from case for 10s)

9.3 (Typical)

Weight

*Current is limited by package

For Footnotes refer to the page 2.

International Rectifier HiRel Products, Inc.

2018-07-10

12 3 4 5 6 7 8

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与JANSR2N7524T1相关器件

型号	品牌	获取价格	描述	数据表
JANSR2N7524U2	INFINEON	获取价格	Rad hard, -60V, -56A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si
JANSR2N7524U2A	INFINEON	获取价格	Rad hard, -60V, 56A, single, P-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100
JANSR2N7524U2S	INFINEON	获取价格	Rad hard, -60V, -56A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si
JANSR2N7545U3	INFINEON	获取价格	Rad hard, -100V, -12.5A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100
JANSR2N7546U3	INFINEON	获取价格	Rad hard, -200V, -8.0A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 k
JANSR2N7547T3	INFINEON	获取价格	Rad hard, -100V, -12.5A, single, P-channel MOSFET, R5 in a TO-257AA package - TO-257AA, 10
JANSR2N7549T1	INFINEON	获取价格	Rad hard, -200V, -32A, single, P-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-2
JANSR2N7549U2	INFINEON	获取价格	Rad hard, -200V, -35.5A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad
JANSR2N7549U2A	INFINEON	获取价格	Rad hard, -200V, 33A, single, P-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100
JANSR2N7550D1	INFINEON	获取价格	Rad hard, -100V, -45A, single, P-channel MOSFET, R5 in a TO-254AA Tabless SMD package - TO

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