Datasheet > JANSR2N7503U8

JANSR2N7503U8

更新时间： 2024-11-06 11:01:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	213K
描述
Rad hard, 100V, 6.9A, single, N-channel MOSFET, R5 in a SMD-0.2 package - SMD-0.2, 100 krad(Si) TID, QPL

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JANSR2N7503U8 数据手册

ꢁ

PD-97192C

IRHNM57110

JANSR2N7503U8

100V, N-CHANNEL

REF: MIL-PRF-19500/743

TECHNOLOGY

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-0.2)

Product Summary

Part Number

IRHNM57110

IRHNM53110

Radiation Level RDS(on)

100K Rads (Si) 0.22Ω 6.9A JANSR2N7503U8

300K Rads (Si) 0.22Ω 6.9A JANSF2N7503U8

QPL Part Number

SMD-0.2

(METAL LID)

Refer to Page 10 for 1 Additional Part Number -

IRHNMC57110 (Ceramic Lid)

International Rectifier’s R5^TMtechnology provides high

performance power MOSFETs for space applications. These

devices have been characterized for Single Event Effects

(SEE) with useful performance up to an LET of 80 (MeV/

(mg/cm²)). The combination of low RDS(on) and low gate

charge reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages of

MOSFETs such as voltage control, fast switching, ease of

paralleling and temperature stability of electrical parameters.

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Ceramic Package

Light Weight

Complimentary P-Channel Available -

IRHNM597110, IRHNMC597110

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C Continuous Drain Current

6.9

= 12V, T = 100°C Continuous Drain Current

4.4

27.6

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

@ T = 25°C

W/°C

0.18

±20

6.9

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

2.3

V/ns

dv/dt

11.5

-55 to 150

°C

Storage Temperature Range

Lead Temperature

STG

300 (for 5s)

Weight

0.25 (Typical)

For footnotes refer to the last page

www.irf.com

02/06/12

12 3 4 5 6 7...10

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与JANSR2N7503U8相关器件

型号	品牌	获取价格	描述	数据表
JANSR2N7503U8C	INFINEON	获取价格	Rad hard, 100V, 6.9A, single, N-channel MOSFET, R5 in a SMD-0.2 package - SMD-0.2, 100 kra
JANSR2N7506U8	INFINEON	获取价格	Rad hard, -100V, -3.1A, single, P-channel MOSFET, R5 in a SMD-0.2 package
JANSR2N7506U8C	INFINEON	获取价格	Rad hard, -100V, -3.1A, single, P-channel MOSFET, R5 in a SMD-0.2 package
JANSR2N7519T3	INFINEON	获取价格	Rad hard, -30V, -20A, single, P-channel MOSFET, R5 in a TO-257AA Low Ohmic package - TO-25
JANSR2N7519U3	INFINEON	获取价格	Rad hard, -30V, -22A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 kra
JANSR2N7520T3	INFINEON	获取价格	Rad hard, -60V, -20A, single, P-channel MOSFET, R5 in a TO-257AA Low Ohmic package - TO-25
JANSR2N7520U3	INFINEON	获取价格	Rad hard, -60V, -22A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 kra
JANSR2N7520U3C	INFINEON	获取价格	Rad hard, -60V, -22A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 kra
JANSR2N7523T1	INFINEON	获取价格	Rad hard, -30V, -45A, single, N-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-25
JANSR2N7523U2	INFINEON	获取价格	Rad hard, -30V, -56A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si

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