Datasheet > JANSR2N7499T2

JANSR2N7499T2

更新时间： 2024-11-04 23:14:07

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
8页	186K
描述
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)

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JANSR2N7499T2 数据手册

ꢁ

PD - 93831A

IRHF57234SE

JANSR2N7499T2

250V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (TO-39)

REF: MIL-PRF-19500/706

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

QPL Part Number

IRHF57234SE 100K Rads (Si)

0.42Ω

5.2A JANSR2N7499T2

TO-39

International Rectifier’s R5^TMtechnology provides

high performance power MOSFETs for space

applications. These devices have been characterized

for Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm²)). The combination

of low RDS(on) and low gate charge reduces the

power losses in switching applications such as DC

to DC converters and motor control. These devices

retain all of the well established advantages of

MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of

electrical parameters.

Features:

Single Event Effect (SEE) Hardened

Ultra Low RDS(on)

Identical Pre- and Post-Electrical Test Conditions

Repetitive Avalanche Ratings

Dynamic dv/dt Ratings

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C Continuous Drain Current

5.2

= 12V, T = 100°C Continuous Drain Current

3.3

20.8

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

@ T = 25°C

W/°C

0.2

±20

Single Pulse Avalanche Energy Á

Avalanche Current À

142

5.2

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

2.5

V/ns

dv/dt

6.8

-55 to 150

^oC

Storage Temperature Range

STG

Lead Temperature

Weight

300 ( 0.063 in./1.6mm from case for 10s)

0.98(Typical)

For footnotes refer to the last page

www.irf.com

06/16/04

12 3 4 5 6 7 8

中文翻译

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与JANSR2N7499T2相关器件

型号	品牌	获取价格	描述	数据表
JANSR2N7500U5	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-2)
JANSR2N7503U8	INFINEON	获取价格	Rad hard, 100V, 6.9A, single, N-channel MOSFET, R5 in a SMD-0.2 package - SMD-0.2, 100 kra
JANSR2N7503U8C	INFINEON	获取价格	Rad hard, 100V, 6.9A, single, N-channel MOSFET, R5 in a SMD-0.2 package - SMD-0.2, 100 kra
JANSR2N7506U8	INFINEON	获取价格	Rad hard, -100V, -3.1A, single, P-channel MOSFET, R5 in a SMD-0.2 package
JANSR2N7506U8C	INFINEON	获取价格	Rad hard, -100V, -3.1A, single, P-channel MOSFET, R5 in a SMD-0.2 package
JANSR2N7519T3	INFINEON	获取价格	Rad hard, -30V, -20A, single, P-channel MOSFET, R5 in a TO-257AA Low Ohmic package - TO-25
JANSR2N7519U3	INFINEON	获取价格	Rad hard, -30V, -22A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 kra
JANSR2N7520T3	INFINEON	获取价格	Rad hard, -60V, -20A, single, P-channel MOSFET, R5 in a TO-257AA Low Ohmic package - TO-25
JANSR2N7520U3	INFINEON	获取价格	Rad hard, -60V, -22A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 kra
JANSR2N7520U3C	INFINEON	获取价格	Rad hard, -60V, -22A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 kra

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