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JANSR2N7488T3 PDF预览

JANSR2N7488T3

更新时间: 2024-11-18 11:21:55
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
8页 177K
描述
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)

JANSR2N7488T3 技术参数

是否Rohs认证: 不符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.37Is Samacsys:N
其他特性:RADIATION HARDENED雪崩能效等级(Eas):80 mJ
外壳连接:DRAIN配置:SINGLE
最小漏源击穿电压:130 V最大漏极电流 (Abs) (ID):18 A
最大漏极电流 (ID):18 A最大漏源导通电阻:0.09 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-257AA
JESD-30 代码:S-XSFM-P3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:SQUARE
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):75 W
最大脉冲漏极电流 (IDM):72 A认证状态:Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:PIN/PEG
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

JANSR2N7488T3 数据手册

 浏览型号JANSR2N7488T3的Datasheet PDF文件第2页浏览型号JANSR2N7488T3的Datasheet PDF文件第3页浏览型号JANSR2N7488T3的Datasheet PDF文件第4页浏览型号JANSR2N7488T3的Datasheet PDF文件第5页浏览型号JANSR2N7488T3的Datasheet PDF文件第6页浏览型号JANSR2N7488T3的Datasheet PDF文件第7页 
                                                                        
PD - 94318C  
IRHY57133CMSE  
JANSR2N7488T3  
130V, N-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
REF:5MIL-PRF-19500/705  
THRU-HOLE (TO-257AA)  
TECHNOLOGY  
™
Product Summary  
Part Number  
Radiation Level RDS(on)  
ID QPL Part Number  
IRHY57133CMSE 100K Rads (Si)  
0.0918A* JANSR2N7488T3  
T0-257AA  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space  
applications. These devices have been characterized  
for Single Event Effects (SEE) with useful performance  
up to an LET of 80 (MeV/(mg/cm2)). The combination  
of low RDS(on) and low gate charge reduces the  
power losses in switching applications such as DC  
to DC converters and motor control. These devices  
retain all of the well established advantages of  
MOSFETs such as voltage control, fast switching,  
ease of paralleling and temperature stability of  
electrical parameters.  
Features:  
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Ultra Low RDS(on)  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Eyelets  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
18*  
D
D
GS  
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
12  
72  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
DM  
@ T = 25°C  
P
75  
W
W/°C  
V
D
C
Linear Derating Factor  
0.6  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
±20  
80  
GS  
E
mJ  
A
AS  
I
18  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
7.5  
mJ  
V/ns  
AR  
dv/dt  
8.0  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
Lead Temperature  
Weight  
300 (0.063in./1.6mm from case for 10sec)  
4.3(Typical)  
* Current is limited by package  
For footnotes refer to the last page  
www.irf.com  
1
06/10/04  

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