是否Rohs认证: | 不符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.37 | Is Samacsys: | N |
其他特性: | RADIATION HARDENED | 雪崩能效等级(Eas): | 80 mJ |
外壳连接: | DRAIN | 配置: | SINGLE |
最小漏源击穿电压: | 130 V | 最大漏极电流 (Abs) (ID): | 18 A |
最大漏极电流 (ID): | 18 A | 最大漏源导通电阻: | 0.09 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-257AA |
JESD-30 代码: | S-XSFM-P3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | SQUARE |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 75 W |
最大脉冲漏极电流 (IDM): | 72 A | 认证状态: | Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | PIN/PEG |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANSR2N7489T3 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) | |
JANSR2N7490T3 | INFINEON |
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Power Field-Effect Transistor, 10A I(D), 250V, 0.41ohm, 1-Element, N-Channel, Silicon, Met | |
JANSR2N7491T2 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) | |
JANSR2N7492T2 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) | |
JANSR2N7493T2 | INFINEON |
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Rad hard, 100V, 11.7A, single, N-channel MOSFET, R5 in a TO-205AF package - TO-205AF, 100 | |
JANSR2N7494U5 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) | |
JANSR2N7495U5 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) | |
JANSR2N7497T2 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) | |
JANSR2N7498T2 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE ( TO-39) | |
JANSR2N7499T2 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) |