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JANSR2N7487U3

更新时间: 2024-11-17 23:14:03
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管脉冲
页数 文件大小 规格书
8页 185K
描述
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)

JANSR2N7487U3 数据手册

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PD - 93837A  
IRHNJ57234SE  
RADIATION HARDENED  
POWER MOSFET  
JANSR2N7487U3  
250V, N-CHANNEL  
SURFACE MOUNT (SMD-0.5)  
REF: MIL5-PRF-19500/704  
TECHNOLOGY  
™
Product Summary  
Part Number  
IRHNJ57234SE 100K Rads (Si)  
Radiation Level RDS(on)  
0.40Ω  
ID  
QPL Part Number  
10A JANSR2N7487U3  
SMD-0.5  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space  
applications. These devices have been characterized  
for Single Event Effects (SEE) with useful performance  
up to an LET of 80 (MeV/(mg/cm2)). The combination  
of low RDS(on) and low gate charge reduces the  
power losses in switching applications such as DC  
to DC converters and motor control. These devices  
retain all of the well established advantages of  
MOSFETs such as voltage control, fast switching,  
ease of paralleling and temperature stability of  
electrical parameters.  
Features:  
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Ultra Low RDS(on)  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Surface Mount  
Ceramic Package  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
10  
D
D
GS  
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
6.4  
40  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
DM  
@ T = 25°C  
P
75  
W
W/°C  
V
D
C
Linear Derating Factor  
0.6  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
±20  
58  
GS  
E
mJ  
A
AS  
I
10  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
7.5  
mJ  
V/ns  
AR  
dv/dt  
2.4  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
Pckg. Mounting Surface Temp.  
Weight  
300 (for 5s)  
1.0(Typical)  
For footnotes refer to the last page  
www.irf.com  
1
05/07/04  

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