Datasheet > JANSR2N7477T1

JANSR2N7477T1

更新时间： 2024-11-06 14:56:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
13页	1314K
描述
Rad hard, 250V, 37A, single, N-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 100 krad(Si) TID, QPL

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

JANSR2N7477T1 数据手册

IRHMS57264SE (JANSR2N7477T1)

PD-95871B

Radiation Hardened Power MOSFET

Thru-Hole (TO-254AA Low Ohmic)

250V, 37A, N-channel, R5 Technology

Product Summary

Features



Single event effect (SEE) hardened



Part number: IRHMS57264SE (JANSR2N7477T1)

REF: MIL-PRF-19500/685

Radiation level: 100 krad (Si)

R_DS(on),max: 61 m

Low R_DS(on)

Fast switching

Low total gate charge

Simple drive requirements

Hermetically sealed

Electrically isolated

Ceramic eyelets

I_D: 37A

Light weight

ESD rating: Class 3A per MIL-STD-750, Method 1020

Potential Applications



DC-DC converter

Motor drives



TO-254AA Low Ohmic

Product Validation

Qualified to JANS screening flow according to MIL-PRF-19500 for space applications

Description

IR HiRel R5 technology provides high performance power MOSFETs for space applications. This technology has

over a decade of proven performance and reliability in satellite applications. These devices have been

characterized for both Total Dose and Single Event Effect (SEE) with useful performance up to LET of

84 MeV/(mg/cm²). The combination of low R_DS(on)and low gate charge reduces the power losses in switching

applications such as DC-DC converters and motor controllers. These devices retain all of the well established

advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical

parameters.

Ordering Information

Table 1

Part number

IRHMS57264SE

Ordering options

Package

Screening Level

COTS

TID Level

TO-254AA Low Ohmic

100 krad(Si)

IRHMS57264SESCS

JANSR2N7477T1

S-Level

JANS

Please read the Important Notice and Warnings at the end of this document

page 1 of 13

www.infineon.com/irhirel

2021-08-09

12 3 4 5 6 7...13

中文翻译

下载PDF

与JANSR2N7477T1相关器件

型号	品牌	获取价格	描述	数据表
JANSR2N7478T1	INFINEON	获取价格	Rad hard, 30V, 45A, single, N-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254A
JANSR2N7479U3	INFINEON	获取价格	Rad hard, 30V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad(
JANSR2N7480U3	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
JANSR2N7481U3	INFINEON	获取价格	Rad hard, 100V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad
JANSR2N7482T3	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
JANSR2N7483T3	INFINEON	获取价格	Rad hard, 60V, 18A, single, N-channel MOSFET, R5 in a TO-257AA package - TO-257AA, 100 kra
JANSR2N7484T3	INFINEON	获取价格	Rad hard, 100V, 18A, single, N-channel MOSFET, R5 in a TO-257AA package - TO-257AA, 100 kr
JANSR2N7485U3	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
JANSR2N7486U3	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
JANSR2N7487U3	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)

与JANSR2N7477T1相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

9
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

35
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

JANSR2N7477T1

JANSR2N7477T1 数据手册

与JANSR2N7477T1相关器件

与JANSR2N7477T1相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

JANSR2N7477T1

JANSR2N7477T1 数据手册

与JANSR2N7477T1相关器件

与JANSR2N7477T1相关文章

您还可以找

您在本页遇到什么问题？