是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | SMD-0.5, 3 PIN | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.36 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 100 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (Abs) (ID): | 22 A |
最大漏极电流 (ID): | 22 A | 最大漏源导通电阻: | 0.03 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-CBCC-N3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | CHIP CARRIER |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 1 W | 最大脉冲漏极电流 (IDM): | 88 A |
认证状态: | Qualified | 参考标准: | MIL-19500/703 |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | NO LEAD |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANSR2N7481U3 | INFINEON |
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Rad hard, 100V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad | |
JANSR2N7482T3 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) | |
JANSR2N7483T3 | INFINEON |
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Rad hard, 60V, 18A, single, N-channel MOSFET, R5 in a TO-257AA package - TO-257AA, 100 kra | |
JANSR2N7484T3 | INFINEON |
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Rad hard, 100V, 18A, single, N-channel MOSFET, R5 in a TO-257AA package - TO-257AA, 100 kr | |
JANSR2N7485U3 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) | |
JANSR2N7486U3 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) | |
JANSR2N7487U3 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) | |
JANSR2N7488T3 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) | |
JANSR2N7489T3 | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) | |
JANSR2N7490T3 | INFINEON |
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Power Field-Effect Transistor, 10A I(D), 250V, 0.41ohm, 1-Element, N-Channel, Silicon, Met |