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JANSR2N7480U3 PDF预览

JANSR2N7480U3

更新时间: 2024-11-19 22:23:47
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
8页 190K
描述
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)

JANSR2N7480U3 技术参数

是否Rohs认证:不符合生命周期:Active
包装说明:SMD-0.5, 3 PINReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.36
Is Samacsys:N雪崩能效等级(Eas):100 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):22 A
最大漏极电流 (ID):22 A最大漏源导通电阻:0.03 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-CBCC-N3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):1 W最大脉冲漏极电流 (IDM):88 A
认证状态:Qualified参考标准:MIL-19500/703
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:NO LEAD
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

JANSR2N7480U3 数据手册

 浏览型号JANSR2N7480U3的Datasheet PDF文件第2页浏览型号JANSR2N7480U3的Datasheet PDF文件第3页浏览型号JANSR2N7480U3的Datasheet PDF文件第4页浏览型号JANSR2N7480U3的Datasheet PDF文件第5页浏览型号JANSR2N7480U3的Datasheet PDF文件第6页浏览型号JANSR2N7480U3的Datasheet PDF文件第7页 
                                                                            
PD-93752C  
IRHNJ57034  
RADIATION HARDENED  
POWER MOSFET  
JANSR2N7480U3  
60V, N-CHANNEL  
SURFACE MOUNT (SMD-0.5)  
REF: MIL-PRF-19500/703  
TECHNOLOGY  
5
™
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
QPL Part Number  
IRHNJ57034 100K Rads (Si)  
IRHNJ53034 300K Rads (Si)  
IRHNJ54034 600K Rads (Si)  
0.03022A* JANSR2N7480U3  
0.03022A* JANSF2N7480U3  
0.03022A* JANSG2N7480U3  
IRHNJ58034 1000K Rads (Si) 0.038Ω  
22A* JANSH2N7480U3  
SMD-0.5  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space  
applications. These devices have been characterized  
for Single Event Effects (SEE) with useful performance  
up to an LET of 80 (MeV/(mg/cm2)). The combination  
of low Rdson and low gate charge reduces the power  
losses in switching applications such as DC to DC  
converters and motor control. These devices retain  
all of the well established advantages of MOSFETs  
such as voltage control, fast switching, ease of  
paralleling and temperature stability of electrical  
parameters.  
Features:  
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Ultra low RDS(on)  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Surface Mount  
Ceramic Package  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
22*  
D
GS  
GS  
C
A
I
D
= 12V, T = 100°C Continuous Drain Current  
21  
88  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
DM  
@ T = 25°C  
P
75  
W
W/°C  
V
D
C
Linear Derating Factor  
0.6  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
±20  
100  
22  
GS  
E
mJ  
A
AS  
I
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
7.5  
mJ  
V/ns  
AR  
dv/dt  
10  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
Pckg. Mounting Surface Temp.  
Weight  
300 (for 5s)  
1.0 (Typical)  
* Current is limited by package  
For footnotes refer to the last page  
www.irf.com  
1
06/16/04  

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