Datasheet > JANSR2N7475T1

JANSR2N7475T1

更新时间： 2024-11-05 04:45:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	198K
描述
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)

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JANSR2N7475T1 数据手册

ꢁ

PD - 95840

IRHMS57163SE

JANSR2N7475T1

130V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (Low-Ohmic TO-254AA)

REF: MIL-PRF-19500/685

TECHNOLOGY

Product Summary

Part Number

Radiation Level R_DS(on)

QPL Part Number

IRHMS57163SE 100K Rads (Si) 0.0145Ω 45A* JANSR2N7475T1

Low-Ohmic

TO-254AA

International Rectifier’s R5^TMtechnology provides

high performance power MOSFETs for space

applications. These devices have been characterized

for Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm²)). The combination

Features:

Low RDS(on)

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

of low R

and low gate charge reduces the

DS(on)

power losses in switching applications such as DC

to DC converters and motor control. These devices

retain all of the well established advantages of

MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of

electrical parameters.

Hermetically Sealed

Ceramic Eyelets

Electrically Isolated

Light Weight

Pre-Irradiation

Absolute Maximum Ratings

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

45*

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current À

Max. Power Dissipation

180

@ T = 25°C

208

W/°C

Linear Derating Factor

1.67

±20

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

432

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

20.8

11.3

-55 to 150

V/ns

dv/dt

Storage Temperature Range

^oC

STG

Lead Temperature

Weight

300 (0.063 in.(1.6 mm from case for 10s))

9.3 ( Typical)

* Current is limited by package

For footnotes refer to the last page

www.irf.com

09/07/04

12 3 4 5 6 7 8

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与JANSR2N7475T1相关器件

型号	品牌	获取价格	描述	数据表
JANSR2N7476T1	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
JANSR2N7477T1	INFINEON	获取价格	Rad hard, 250V, 37A, single, N-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254
JANSR2N7478T1	INFINEON	获取价格	Rad hard, 30V, 45A, single, N-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254A
JANSR2N7479U3	INFINEON	获取价格	Rad hard, 30V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad(
JANSR2N7480U3	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
JANSR2N7481U3	INFINEON	获取价格	Rad hard, 100V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad
JANSR2N7482T3	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
JANSR2N7483T3	INFINEON	获取价格	Rad hard, 60V, 18A, single, N-channel MOSFET, R5 in a TO-257AA package - TO-257AA, 100 kra
JANSR2N7484T3	INFINEON	获取价格	Rad hard, 100V, 18A, single, N-channel MOSFET, R5 in a TO-257AA package - TO-257AA, 100 kr
JANSR2N7485U3	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)

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