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JANSR2N7473U2 PDF预览

JANSR2N7473U2

更新时间: 2024-11-18 04:45:07
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管脉冲
页数 文件大小 规格书
8页 179K
描述
RADIATION HARDENED POWER MOSFET THRU-HOLE (SMD-2)

JANSR2N7473U2 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:HERMETIC SEALED, CERAMIC, SMD-2, 3 PINReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.36
Is Samacsys:N其他特性:RADIATION HARDENED
雪崩能效等级(Eas):380 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (Abs) (ID):53.5 A最大漏极电流 (ID):53.5 A
最大漏源导通电阻:0.038 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-CBCC-N3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:CHIP CARRIER峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):250 W
最大脉冲漏极电流 (IDM):214 A认证状态:Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:NO LEAD
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

JANSR2N7473U2 数据手册

 浏览型号JANSR2N7473U2的Datasheet PDF文件第2页浏览型号JANSR2N7473U2的Datasheet PDF文件第3页浏览型号JANSR2N7473U2的Datasheet PDF文件第4页浏览型号JANSR2N7473U2的Datasheet PDF文件第5页浏览型号JANSR2N7473U2的Datasheet PDF文件第6页浏览型号JANSR2N7473U2的Datasheet PDF文件第7页 
PD-91839J  
IRHNA57260SE  
JANSR2N7473U2  
200V, N CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (SMD-2)  
REF:MIL-PRF-19500/684  
TECHNOLOGY  
™
Product Summary  
Part Number  
Radiation Level RDS(on) ID  
QPL Part Number  
IRHNA57260SE 100K Rads (Si) 0.03853.5A JANSR2N7473U2  
SMD-2  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space  
Features:  
applications. These devices have been characterized  
for Single Event Effects (SEE) with useful performance  
up to an LET of 80 (MeV/(mg/cm2)). The combination  
of low RDS(on) and low gate charge reduces the  
power losses in switching applications such as DC  
to DC converters and motor control. These devices  
retain all of the well established advantages of  
MOSFETs such as voltage control, fast switching,  
ease of paralleling and temperature stability of  
electrical parameters.  
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Ultra Low RDS(on)  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Surface Mount  
Ceramic Package  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C Continuous Drain Current  
53.5  
D
D
GS  
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
34  
214  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
DM  
@ T = 25°C  
P
250  
W
W/°C  
V
D
C
2.0  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
±20  
GS  
E
380  
mJ  
A
AS  
I
53.5  
25  
AR  
E
AR  
dv/dt  
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
mJ  
V/ns  
9.2  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
Pckg. Mounting Surface Temp.  
Weight  
300 (for 5s)  
3.3 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
04/25/06  

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