Datasheet > JANSR2N7401

JANSR2N7401

更新时间： 2024-11-04 22:24:47

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
8页	58K
描述
6A, 250V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET

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JANSR2N7401 数据手册

JANSR2N7401

August 1998

File Number 4571

Formerly FSS234R4

6A, 250V, 0.600 Ohm, Rad Hard,

N-Channel Power MOSFET

Features

• 6A, 250V, r

• Total Dose

= 0.600Ω

DS(ON)

The Discrete Products Operation of Intersil has developed a

series of Radiation Hardened MOSFETs speciﬁcally

designed for commercial and military space applications.

Enhanced Power MOSFET immunity to Single Event Effects

(SEE), Single Event Gate Rupture (SEGR) in particular, is

combined with 100K RADS of total dose hardness to provide

devices which are ideally suited to harsh space environ-

ments. The dose rate and neutron tolerance necessary for

military applications have not been sacriﬁced.

- Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

• Single Event

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm with V

of 10V Off-Bias

to 80% of Rated Breakdown and V

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

DSS

The Intersil portfolio of SEGR resistant radiation hardened

MOSFETs includes N-Channel and P-Channel devices in a

variety of voltage, current and on-resistance ratings. Numer-

ous packaging options are also available.

- Typically Survives 2E12 if Current Limited to I

• Photo Current

- 4.0nA Per-RAD(Si)/s Typically

This MOSFET is an enhancement-mode silicon-gate power

ﬁeld-effect transistor of the vertical DMOS (VDMOS) struc-

ture. It is specially designed and processed to be radiation

tolerant. The MOSFET is well suited for applications

exposed to radiation environments such as switching regula-

tion, switching converters, motor drives, relay drivers and

drivers for high-power bipolar switching transistors requiring

high speed and low gate drive power. This type can be oper-

ated directly from integrated circuits.

• Neutron

- Maintain Pre-RAD Specifications for 1E13 Neutrons/cm

- Usable to 1E14 Neutrons/cm

Symbol

Also available at other radiation and screening levels. See us

on the web, Intersil’ home page: http://www.semi.inter-

sil.com. Contact your local Intersil Sales Office for additional

information.

Ordering Information

PART NUMBER

PACKAGE

BRAND

JANSR2N7401

TO-257AA

JANSR2N7401

Die Family TA17638.

MIL-PRF-19500/632.

Package

TO-257AA

CAUTION: Beryllia Warning per MIL-S-19500

refer to package speciﬁcations.

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

4-1

12 3 4 5 6 7 8

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与JANSR2N7401相关器件

型号	品牌	获取价格	描述	数据表
JANSR2N7402	INTERSIL	获取价格	3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET
JANSR2N7402	INFINEON	获取价格	Power Field-Effect Transistor, 3A I(D), 500V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal
JANSR2N7403	INTERSIL	获取价格	22A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFET
JANSR2N7404	INTERSIL	获取价格	15A, -200V, 0.290 Ohm, Rad Hard, P-Channel Power MOSFET
JANSR2N7405	INTERSIL	获取价格	25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET
JANSR2N7406	INTERSIL	获取价格	24A, 200V, 0.110 Ohm, Rad Hard, N-Channel Power MOSFET
JANSR2N7407	INTERSIL	获取价格	Formerly Available As FSF254R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFET
JANSR2N7408	INTERSIL	获取价格	Formerly Available As FSF450R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFET
JANSR2N7410	INTERSIL	获取价格	3.5A, 100V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET
JANSR2N7411	INTERSIL	获取价格	2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET

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