Datasheet > JANSR2N7430T1

JANSR2N7430T1

更新时间： 2024-11-05 19:42:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		局域网开关脉冲晶体管
页数	文件大小	规格书
9页	89K
描述
Power Field-Effect Transistor, 70A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA

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数据手册

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JANSR2N7430T1 技术参数

生命周期：	Transferred	包装说明：	FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.25	外壳连接：	ISOLATED
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	60 V
最大漏极电流 (ID)：	70 A	最大漏源导通电阻：	0.012 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JEDEC-95代码：	TO-254AA
JESD-30 代码：	S-MSFM-P3	元件数量：	1
端子数量：	3	工作模式：	ENHANCEMENT MODE
封装主体材料：	METAL	封装形状：	SQUARE
封装形式：	FLANGE MOUNT	极性/信道类型：	N-CHANNEL
最大脉冲漏极电流 (IDM)：	200 A	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	PIN/PEG
端子位置：	SINGLE	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

JANSR2N7430T1 数据手册

JANSR2N7438

Data Sheet

January 1999

File Number 4638

Formerly Available As FSL913A0R4,

Radiation Hardened, SEGR Resistant,

Features

Title

• 7A, -100V, r

= 0.300Ω

DS(ON)

ANS P-Channel Power MOSFETs

N74

• Total Dose

The Discrete Products Operation of Intersil has developed a

series of Radiation Hardened MOSFETs speciﬁcally

designed for commercial and military space applications.

Enhanced Power MOSFET immunity to Single Event Effects

(SEE), Single Event Gate Rupture (SEGR) in particular, is

combined with 100K RADS of total dose hardness to provide

devices which are ideally suited to harsh space

- Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

• Single Event

or-

rly

ail-

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm with

up to 80% of Rated Breakdown and

of 10V Off-Bias

environments. The dose rate and neutron tolerance

necessary for military applications have not been sacriﬁced.

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

DSS

- Typically Survives 2E12 if Current Limited to I

The Intersil portfolio of SEGR resistant radiation hardened

MOSFETs includes N-Channel and P-Channel devices in a

variety of voltage, current and on-resistance ratings.

Numerous packaging options are also available.

L91

0R4

adi-

rd-

ed,

sis-

• Photo Current

- 1.5nA Per-RAD(Si)/s Typically

• Neutron

This MOSFET is an enhancement-mode silicon-gate power

ﬁeld-effect transistor of the vertical DMOS (VDMOS)

structure. It is specially designed and processed to be

radiation tolerant. The MOSFET is well suited for

applications exposed to radiation environments such as

switching regulation, switching converters, motor drives,

relay drivers and drivers for high-power bipolar switching

transistors requiring high speed and low gate drive power.

This type can be operated directly from integrated circuits.

- Maintain Pre-RAD Speciﬁcations

for 3E13 Neutrons/cm

- Usable to 3E14 Neutrons/cm

Symbol

Chan-

wer

OS-

Ts)

Also available at other radiation and screening levels. See us

on the web, Intersil’ home page:

http://www.semi.intersil.com. Contact your local Intersil Sales

Ofﬁce for additional information.

utho

Packaging

TO-205AF

Ordering Information

ey-

rds

ter-

PART NUMBER

PACKAGE

BRAND

JANSR2N7438

TO-205AF

JANSR2N7438

Die Family TA17796.

MIL-PRF-19500/658.

rpo-

on,

mi-

ctor,

rly

ail-

JANSR2N7438 Rev. A

12 3 4 5 6 7...9

中文翻译

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与JANSR2N7430T1相关器件

型号	品牌	获取价格	描述	数据表
JANSR2N7431	INFINEON	获取价格	Rad hard, 60V, 35A, single, N-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 100 kra
JANSR2N7431D	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Met
JANSR2N7431U	INFINEON	获取价格	Rad hard, 60V, 56A, single, N-channel MOSFET, R4 in a SMD-2 package - SMD-2, 100 krad(Si)
JANSR2N7432	ETC	获取价格	100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
JANSR2N7432U	ETC	获取价格	100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package
JANSR2N7433	INFINEON	获取价格	Rad hard, 200V, 35A, single, N-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 100 kr
JANSR2N7433U	INFINEON	获取价格	Rad hard, 200V, 27A, single, N-channel MOSFET, R4 in a SMD-2 package - JANS Certified vers
JANSR2N7434	INFINEON	获取价格	Power Field-Effect Transistor, 31A I(D), 250V, 0.123ohm, 1-Element, N-Channel, Silicon, Me
JANSR2N7438	INTERSIL	获取价格	Formerly Available As FSL913A0R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSF
JANSR2N7438	FAIRCHILD	获取价格	Power Field-Effect Transistor, 7A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal

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