Datasheet > JANSR2N7432

JANSR2N7432

更新时间： 2024-11-04 23:59:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管脉冲局域网
页数	文件大小	规格书
8页	266K
描述
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package

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JANSR2N7432 数据手册

Absolute Maximum Ratings

Parameter

PD - 91331C

IRHM7160

JANSR2N7432

100V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (T0-254AA)

RAD Hard HEXFET TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

QPL Part Number

IRHM7160

IRHM3160

IRHM4160

IRHM8160

100K Rads (Si) 0.045Ω 35*A JANSR2N7432

300K Rads (Si) 0.045Ω 35*A JANSF2N7432

600K Rads (Si) 0.045Ω 35*A JANSG2N7432

1000K Rads (Si) 0.045Ω 35*A JANSH2N7432

TO-254AA

International Rectifiers RADHard HEXFET^®technol-

ogy provides high performance power MOSFETs for

space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been character-

ized for both Total Dose and Single Event Effects (SEE).

The combination of low Rdson and low gate charge

reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of elec-

trical parameters.

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Light Weight

Pre-Irradiation

Units

@ V

= 12V, T = 25°C Continuous Drain Current

35*

= 12V, T = 100°C Continuous Drain Current

35*

201

Pulsed Drain Current ➀

Max. Power Dissipation

@ T = 25°C

250

W/°C

Linear Derating Factor

2.0

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

500

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

V/ns

dv/dt

7.3

-55 to 150

Storage Temperature Range

^oC

STG

300 ( 0.063 in.(1.6mm) from case for 10s)

9.3 (Typical )

Lead Temperature

Weight

*Current limited by pin diameter

For footnotes refer to the last page

www.irf.com

8/14/01

12 3 4 5 6 7 8

中文翻译

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与JANSR2N7432相关器件

型号	品牌	获取价格	描述	数据表
JANSR2N7432U	ETC	获取价格	100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package
JANSR2N7433	INFINEON	获取价格	Rad hard, 200V, 35A, single, N-channel MOSFET, R4 in a TO-254AA package - TO-254AA, 100 kr
JANSR2N7433U	INFINEON	获取价格	Rad hard, 200V, 27A, single, N-channel MOSFET, R4 in a SMD-2 package - JANS Certified vers
JANSR2N7434	INFINEON	获取价格	Power Field-Effect Transistor, 31A I(D), 250V, 0.123ohm, 1-Element, N-Channel, Silicon, Me
JANSR2N7438	INTERSIL	获取价格	Formerly Available As FSL913A0R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSF
JANSR2N7438	FAIRCHILD	获取价格	Power Field-Effect Transistor, 7A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal
JANSR2N7439	INTERSIL	获取价格	Formerly Available As FSL923A0R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSF
JANSR2N7440	INTERSIL	获取价格	Formerly Available as FSS913A0R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSF
JANSR2N7463T2	INFINEON	获取价格	Rad hard, 400V, 3A, single, N-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 100 kra
JANSR2N7464T2	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)

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