5秒后页面跳转
捷配首页

Datasheet > JANSR2N7471T1
JANSR2N7471T1 PDF预览

JANSR2N7471T1

更新时间： 2024-11-06 14:49:35
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
13页 1134K
描述
Rad hard, 100V, 45A, single, N-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254AA Low Ohmic, 100 krad(Si) TID, QPL

阅读下载

中文翻译

获取价格

JANSR2N7471T1 数据手册

 浏览型号JANSR2N7471T1的Datasheet PDF文件第2页浏览型号JANSR2N7471T1的Datasheet PDF文件第3页浏览型号JANSR2N7471T1的Datasheet PDF文件第4页浏览型号JANSR2N7471T1的Datasheet PDF文件第5页浏览型号JANSR2N7471T1的Datasheet PDF文件第6页浏览型号JANSR2N7471T1的Datasheet PDF文件第7页 
IRHMS57160 (JANSR2N7471T1)  
PD-95889G  
Radiation Hardened Power MOSFET  
Thru-Hole (Low-Ohmic TO-254AA)  
100V, 45A, N-channel, R5 Technology  
Features  
Product Summary  
Single event effect (SEE) hardened  
BVDSS: 100V  
ID : 45A  
RDS(on),max : 14m  
QG,max : 160nC  
REF: MIL-PRF-19500/698  
Low RDS(on)  
Low total gate charge  
Simple drive requirements  
Hermetically sealed  
Electrically isolated  
Ceramic eyelets  
ESD rating: Class 3B per MIL-STD-750, Method 1020  
Potential Applications  
DC-DC converter  
Motor drives  
Low-Ohmic TO-254AA  
Thermal management  
Product Validation  
Qualified to JANS screening flow according to MIL-PRF-19500 for space applications  
Description  
IR HiRel R5 technology provides high performance power MOSFETs for space applications. This technology has  
over a decade of proven performance and reliability in satellite applications. These devices have been  
characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate  
charge reduces the power losses in switching applications such as DC to DC converters and motor control. These  
devices retain all of the well-established advantages of MOSFETs such as voltage control, fast switching and  
temperature stability of electrical parameters.  
Ordering Information  
Table 1  
Part number  
IRHMS57160  
Ordering options  
Package  
Screening Level  
COTS  
TID Level  
Low-Ohmic TO-254AA  
Low-Ohmic TO-254AA  
Low-Ohmic TO-254AA  
Low-Ohmic TO-254AA  
Low-Ohmic TO-254AA  
Low-Ohmic TO-254AA  
100 krad(Si)  
100 krad(Si)  
300 krad(Si)  
300 krad(Si)  
500 krad(Si)  
500 krad(Si)  
JANSR2N7471T1  
IRHMS53160  
JANS  
COTS  
JANSF2N7471T1  
IRHMS54160  
JANS  
COTS  
JANSG2N7471T1  
JANS  
Please read the Important Notice and Warnings at the end of this document  
page 1 of 13  
www.infineon.com/irhirel  
2022-05-26  
 
 
 
 
 
1234567...13

中文翻译

下载PDF

与JANSR2N7471T1相关器件

型号 品牌 获取价格 描述 数据表
JANSR2N7472U2 INFINEON

获取价格

 		RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-2)
JANSR2N7472U2A INFINEON

获取价格

 		Rad hard, 130V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100
JANSR2N7472U2L INFINEON

获取价格

 		Rad hard, 130V, 62A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si)
JANSR2N7472U2S INFINEON

获取价格

 		Rad hard, 130V, 62A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si)
JANSR2N7473U2 INFINEON

获取价格

 		RADIATION HARDENED POWER MOSFET THRU-HOLE (SMD-2)
JANSR2N7473U2A INFINEON

获取价格

 		Rad hard, 200V, 53A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100
JANSR2N7474U2 INFINEON

获取价格

 		RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
JANSR2N7474U2A INFINEON

获取价格

 		Rad hard, 250V, 45A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100
JANSR2N7475T1 INFINEON

获取价格

 		RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
JANSR2N7476T1 INFINEON

获取价格

 		RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)

与JANSR2N7471T1相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证