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JANSR2N7470T1 PDF预览

JANSR2N7470T1

更新时间: 2024-11-21 04:45:03
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管脉冲局域网
页数 文件大小 规格书
8页 174K
描述
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)

JANSR2N7470T1 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:FLANGE MOUNT, S-XSFM-P3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.36
Is Samacsys:N雪崩能效等级(Eas):824 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):45 A
最大漏极电流 (ID):45 A最大漏源导通电阻:0.0076 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-254AA
JESD-30 代码:S-XSFM-P3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:UNSPECIFIED
封装形状:SQUARE封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):208 W最大脉冲漏极电流 (IDM):180 A
认证状态:Qualified参考标准:MIL-19500; RH - 100K Rad(Si)
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:PIN/PEG
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):120 ns最大开启时间(吨):160 ns
Base Number Matches:1

JANSR2N7470T1 数据手册

 浏览型号JANSR2N7470T1的Datasheet PDF文件第2页浏览型号JANSR2N7470T1的Datasheet PDF文件第3页浏览型号JANSR2N7470T1的Datasheet PDF文件第4页浏览型号JANSR2N7470T1的Datasheet PDF文件第5页浏览型号JANSR2N7470T1的Datasheet PDF文件第6页浏览型号JANSR2N7470T1的Datasheet PDF文件第7页 
                                                                             
PD-95838B  
IRHMS57064  
JANSR2N7470T1  
60V, N-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
REF: MIL5-PRF-19500/698  
THRU-HOLE (Low-Ohmic TO-254AA)  
TECHNOLOGY  
™
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
QPL Part Number  
IRHMS57064 100K Rads (Si) 0.006645A* JANSR2N7470T1  
IRHMS53064 300K Rads (Si) 0.006645A* JANSF2N7470T1  
IRHMS54064 500K Rads (Si) 0.006645A* JANSG2N7470T1  
IRHMS58064 1000K Rads (Si) 0.006645A* JANSH2N7470T1  
Low-Ohmic  
TO-254AA  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space  
applications. These devices have been characterized  
for Single Event Effects (SEE) with useful performance  
up to an LET of 80 (MeV/(mg/cm2)). The combination  
Features:  
n
n
n
n
n
n
n
n
n
n
Low RDS(on)  
Fast Switching  
Single Event Effect (SEE) Hardened  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Eyelets  
of low R  
and low gate charge reduces the  
DS(on)  
power losses in switching applications such as DC  
to DC converters and motor control. These devices  
retain all of the well established advantages of  
MOSFETs such as voltage control, fast switching,  
ease of paralleling and temperature stability of  
electrical parameters.  
Electrically Isolated  
Light Weight  
Pre-Irradiation  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
45*  
45*  
D
D
GS  
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
180  
DM  
@ T = 25°C  
P
D
208  
W
W/°C  
V
C
1.67  
±20  
V
GS  
E
Single Pulse Avalanche Energy Á  
Avalanche Current À  
824  
mJ  
A
AS  
I
45  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
20  
mJ  
V/ns  
AR  
dv/dt  
4.3  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
Lead Temperature  
Weight  
300 (0.063 in. /1.6 mm from case for 10s)  
9.3 (Typical)  
* Current is limited by package  
For footnotes refer to the last page  
www.irf.com  
1
07/24/06  

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