Datasheet > JANSR2N7472U2

JANSR2N7472U2

更新时间： 2024-11-18 04:45:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	181K
描述
RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-2)

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JANSR2N7472U2 数据手册

ꢁ

PD-93856D

IRHNA57163SE

JANSR2N7472U2

130V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT(SMD-2)

REF: MIL-PRF-19500/684

TECHNOLOGY

Product Summary

Part Number

Radiation Level R_DS(on)

QPL Part Number

IRHNA57163SE

100K Rads (Si) 0.0135Ω 75A* JANSR2N7472U2

SMD-2

International Rectifier’s R5^TMtechnology provides

high performance power MOSFETs for space

applications. These devices have been characterized

for Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm²)). The combination

of low RDS(on) and low gate charge reduces the

power losses in switching applications such as DC

to DC converters and motor control. These devices

retain all of the well established advantages of

MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of

electrical parameters.

Features:

Single Event Effect (SEE) Hardened

Ultra Low RDS(on)

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Ceramic Package

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

75*

I @ V

= 12V, T = 100°C Continuous Drain Current

300

Pulsed Drain Current À

Max. Power Dissipation

@ T = 25°C

250

W/°C

Linear Derating Factor

2.0

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

±20

280

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

V/ns

dv/dt

5.5

-55 to 150

Storage Temperature Range

^oC

STG

Pckg. Mounting Surface Temp.

Weight

300 (for 5s)

3.3 (Typical)

* Current is limited by package

For footnotes refer to the last page

www.irf.com

04/25/06

12 3 4 5 6 7 8

中文翻译

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与JANSR2N7472U2相关器件

型号	品牌	获取价格	描述	数据表
JANSR2N7472U2A	INFINEON	获取价格	Rad hard, 130V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100
JANSR2N7472U2L	INFINEON	获取价格	Rad hard, 130V, 62A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si)
JANSR2N7472U2S	INFINEON	获取价格	Rad hard, 130V, 62A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si)
JANSR2N7473U2	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (SMD-2)
JANSR2N7473U2A	INFINEON	获取价格	Rad hard, 200V, 53A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100
JANSR2N7474U2	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
JANSR2N7474U2A	INFINEON	获取价格	Rad hard, 250V, 45A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100
JANSR2N7475T1	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
JANSR2N7476T1	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
JANSR2N7477T1	INFINEON	获取价格	Rad hard, 250V, 37A, single, N-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254

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