Datasheet > JANSR2N7440

JANSR2N7440

更新时间： 2024-11-17 22:55:35

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
8页	74K
描述
Formerly Available as FSS913A0R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs

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JANSR2N7440 数据手册

JANSR2N7440

Data Sheet

November 1999

File Number 4803

Formerly Available as FSS913A0R4,

Radiation Hardened, SEGR Resistant,

P-Channel Power MOSFETs

Features

• 10A, -100V, r

= 0.280Ω

DS(ON)

• Total Dose

The Discrete Products Operation of Intersil has developed a

series of Radiation Hardened MOSFETs speciﬁcally

designed for commercial and military space applications.

Enhanced Power MOSFET immunity to Single Event Effects

(SEE), Single Event Gate Rupture (SEGR) in particular, is

combined with 100K RADS of total dose hardness to provide

devices which are ideally suited to harsh space

- Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

• Single Event

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm with

up to 80% of Rated Breakdown and

of 10V Off-Bias

environments. The dose rate and neutron tolerance

necessary for military applications have not been sacriﬁced.

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

DSS

- Typically Survives 2E12 if Current Limited to I

The Intersil portfolio of SEGR resistant radiation hardened

MOSFETs includes N-Channel and P-Channel devices in a

variety of voltage, current and on-resistance ratings.

Numerous packaging options are also available.

• Photo Current

- 1.5nA Per-RAD(Si)/s Typically

• Neutron

This MOSFET is an enhancement-mode silicon-gate power

ﬁeld-effect transistor of the vertical DMOS (VDMOS)

structure. It is specially designed and processed to be

radiation tolerant. The MOSFET is well suited for

- Maintain Pre-RAD Speciﬁcations

for 3E13 Neutrons/cm

- Usable to 3E14 Neutrons/cm

applications exposed to radiation environments such as

switching regulation, switching converters, motor drives,

relay drivers and drivers for high-power bipolar switching

transistors requiring high speed and low gate drive power.

This type can be operated directly from integrated circuits.

Symbol

Also available at other radiation and screening levels. See us

on the web, Intersil’s home page: http://www.intersil.com.

Contact your local Intersil Sales Office for additional

information.

Packaging

TO-257AA

Ordering Information

PART NUMBER

PACKAGE

BRAND

JANSR2N7440

TO-257AA

JANSR2N7440

Die Family TA17796.

MIL-PRF-19500/659.

CAUTION: Beryllia Warning per MIL-S-19500

refer to package speciﬁcations.

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

12 3 4 5 6 7 8

中文翻译

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与JANSR2N7440相关器件

型号	品牌	获取价格	描述	数据表
JANSR2N7463T2	INFINEON	获取价格	Rad hard, 400V, 3A, single, N-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 100 kra
JANSR2N7464T2	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
JANSR2N7465U3	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
JANSR2N7466U3	INFINEON	获取价格	Power Field-Effect Transistor, 4.5A I(D), 500V, 1.65ohm, 1-Element, N-Channel, Silicon, Me
JANSR2N7467U2	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET
JANSR2N7467U2A	INFINEON	获取价格	Rad hard, 30V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100 k
JANSR2N7467U2S	INFINEON	获取价格	Rad hard, 30V, 75A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si)
JANSR2N7468U2	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
JANSR2N7468U2A	INFINEON	获取价格	Rad hard, 60V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100 k
JANSR2N7468U2L	INFINEON	获取价格	Rad hard, 60V, 75A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si)

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