Datasheet > JANSR2N7468U2L

JANSR2N7468U2L

更新时间： 2024-11-22 11:01:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	1285K
描述
Rad hard, 60V, 75A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si) TID, QPL

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

JANSR2N7468U2L 数据手册

PD-91852J

IRHNA57064

JANSR2N7468U2

60V, N-CHANNEL

REF: MIL-PRF-19500/673

RADIATION HARDENED

POWER MOSFET

TECHNOLOGY

SURFACE MOUNT (SMD-2)

Product Summary

Part Number

IRHNA57064

IRHNA53064

IRHNA55064

IRHNA58064

Radiation Level RDS(on)

I_D

QPL Part Number

JANSR2N7468U2

JANSF2N7468U2

JANSG2N7468U2

JANSH2N7468U2

100 kRads(Si)

300 kRads(Si)

500 kRads(Si)

1000 kRads(Si)

75A*

5.6m

6.5m

SMD-2

Description

Features

 Single Event Effect (SEE) Hardened

 Low RDS(on)

 Low Total Gate Charge

 Simple Drive Requirements

 Ease of Paralleling

 Hermetically Sealed

 Electrically Isolated

 Ceramic Package

IRHNA57064 is part of the International Rectifier HiRel

family of products. IR HiRel R5 technology provides high

performance power MOSFETs for space applications.

These devices have been characterized for both Total

Dose and Single Event Effect (SEE) with useful

performance up to LET of 80 (MeV/(mg/cm²). The

combination of low RDS(on) and low gate charge reduces

the power losses in switching applications such as DC-

DC converters and motor controllers. These devices

retain all of the well established advantages of MOSFETs

such as voltage control, fast switching, ease of

paralleling and temperature stability of electrical

parameters.

 Light Weight

 Surface Mount

 ESD Rating: Class 3B per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Parameter

Pre-Irradiation

Units

75*

I_D@ V_GS= 12V, T_C= 25°C Continuous Drain Current

I_D@ V_GS= 12V, T_C= 100°C Continuous Drain Current

75*

300

250

2.0

I_DM

Pulsed Drain Current 

W/°C

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

± 20

500

V_GS

E_AS

I_AR

V/ns

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

4.4

-55 to + 150

T_STG

°C

300 (for 5s)

3.3 (Typical)

Weight

* Current is limited by package

For Footnotes, refer to the page 2.

2018-03-09

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7 8

中文翻译

下载PDF

与JANSR2N7468U2L相关器件

型号	品牌	获取价格	描述	数据表
JANSR2N7468U2S	INFINEON	获取价格	Power Field-Effect Transistor,
JANSR2N7469U2	INFINEON	获取价格	Rad hard, 100V, 69A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si)
JANSR2N7469U2A	INFINEON	获取价格	Rad hard, 100V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100
JANSR2N7469U2L	INFINEON	获取价格	Rad hard, 100V, 69A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si)
JANSR2N7469U2S	INFINEON	获取价格	Rad hard, 100V, 69A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si)
JANSR2N7470T1	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
JANSR2N7471T1	INFINEON	获取价格	Rad hard, 100V, 45A, single, N-channel MOSFET, R5 in a TO-254AA Low Ohmic package - TO-254
JANSR2N7472U2	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-2)
JANSR2N7472U2A	INFINEON	获取价格	Rad hard, 130V, 75A, single, N-channel MOSFET, R5 in a SupIR-SMD package - SupIR-SMD, 100
JANSR2N7472U2L	INFINEON	获取价格	Rad hard, 130V, 62A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si)

与JANSR2N7468U2L相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

27
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

19
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

49
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

47

产品中心

服务支持

精选活动

关于我们

帮助中心

JANSR2N7468U2L

JANSR2N7468U2L 数据手册

与JANSR2N7468U2L相关器件

与JANSR2N7468U2L相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

JANSR2N7468U2L

JANSR2N7468U2L 数据手册

与JANSR2N7468U2L相关器件

与JANSR2N7468U2L相关文章

您还可以找

您在本页遇到什么问题？