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JANSR2N7434

更新时间： 2024-11-18 19:50:23
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
28页 341K
描述
Power Field-Effect Transistor, 31A I(D), 250V, 0.123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,

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JANSR2N7434 技术参数

是否Rohs认证：不符合生命周期：Active
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.23Is Samacsys：N
雪崩能效等级（Eas）：500 mJ配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：250 V最大漏极电流 (Abs) (ID)：31 A
最大漏极电流 (ID)：31 A最大漏源导通电阻：0.123 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-254AA
JESD-30 代码：S-MSFM-P3JESD-609代码：e0
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：METAL封装形状：SQUARE
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：3 W
最大脉冲漏极电流 (IDM)：124 A认证状态：Qualified
子类别：FET General Purpose Power表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：PIN/PEG
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

JANSR2N7434 数据手册

 浏览型号JANSR2N7434的Datasheet PDF文件第2页浏览型号JANSR2N7434的Datasheet PDF文件第3页浏览型号JANSR2N7434的Datasheet PDF文件第4页浏览型号JANSR2N7434的Datasheet PDF文件第5页浏览型号JANSR2N7434的Datasheet PDF文件第6页浏览型号JANSR2N7434的Datasheet PDF文件第7页 
INCH-POUND  
The documentation and process conversion  
measures necessary to comply with this revision  
shall be completed by 1 June 2013.  
MIL-PRF-19500/661D  
17 April 2013  
SUPERSEDING  
MIL-PRF-19500/661C  
7 August 2006  
PERFORMANCE SPECIFICATION SHEET  
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED  
(TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL, SILICON,  
TYPES 2N7444, 2N7434, 2N7391, AND 2N7392,  
JANTXVR AND JANSR  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
The requirements for acquiring the product described herein shall consist of  
this specification sheet and MIL-PRF-19500.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for an N-channel, enhancement-mode,  
MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor intended for use in high  
density power switching applications. Two levels of product assurance are provided for each device type specified in  
MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5 for  
JANHC and JANKC die versions.  
1.2 Physical dimensions. See figure 1, TO-254AA.  
1.3 Maximum ratings. Unless otherwise specified, TC = +25°C.  
Type  
PT (1)  
PT  
TA =  
+25°C  
W
VDS  
VDG  
VGS  
ID1  
(3) (4)  
ID2  
(3) (4)  
TC = +100°C  
A dc  
IS  
IDM  
(5)  
TJ  
and  
TSTG  
VISO  
70,000 ft  
altitude  
RθJC  
(2)  
W
V dc  
V dc  
V dc  
A dc  
A dc  
A(pk)  
V dc  
°C/W  
°C  
2N7444  
2N7434  
2N7391  
2N7392  
250  
250  
250  
250  
3.0  
3.0  
3.0  
3.0  
0.5  
0.5  
0.5  
0.5  
200  
250  
400  
500  
200  
250  
400  
500  
35.0  
31.0  
22.0  
18.0  
25.0  
19.0  
14.0  
11.7  
35.0  
31.0  
22.0  
18.0  
140  
124  
88  
-55  
to  
+150  
NA  
250  
400  
500  
±20  
±20  
±20  
±20  
72  
(1) Derate linearly 2.0 W/°C for TC > +25°C.  
(2) See figure 2, thermal impedance curves.  
(3) The following formula derives the maximum theoretical ID limit. ID is limited by package and internal wires  
and may be limited by pin diameter:  
-
TJM TC  
( on ) at  
TJM  
=
ID  
(
)
x
(
)
RθJC  
RDS  
(4) See figure 3, maximum drain current graphs.  
(5) IDM = 4 x ID1 as calculated in note 3.  
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,  
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since  
contact information can change, you may want to verify the currency of this address information using the  
ASSIST Online database at https://assist.dla.mil.  
AMSC N/A  
FSC 5961  
1234567...28

中文翻译

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JANSR2N7434 替代型号

型号 品牌 替代类型 描述 数据表
IRHM7264SE INFINEON

完全替代

 TRANSISTOR N-CHANNEL(BVdss=250V, Rds(on)=0.087ohm, Id=35A*)
IRHM7264SEPBF INFINEON

功能相似

 Power Field-Effect Transistor, 31A I(D), 250V, 0.123ohm, 1-Element, N-Channel, Silicon, Me

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