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IRHM7264SEPBF PDF预览

IRHM7264SEPBF

更新时间： 2024-09-23 20:50:47
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
8页 128K
描述
Power Field-Effect Transistor, 31A I(D), 250V, 0.123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA

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中文翻译

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IRHM7264SEPBF 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：FLANGE MOUNT, S-MSFM-P3Reach Compliance Code：compliant
风险等级：5.68其他特性：AVALANCHE RATED; RADIATION HARDENED
雪崩能效等级（Eas）：500 mJ外壳连接：ISOLATED
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：250 V
最大漏极电流 (ID)：31 A最大漏源导通电阻：0.123 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-254AA
JESD-30 代码：S-MSFM-P3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：METAL
封装形状：SQUARE封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：124 A表面贴装：NO
端子形式：PIN/PEG端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

IRHM7264SEPBF 数据手册

 浏览型号IRHM7264SEPBF的Datasheet PDF文件第2页浏览型号IRHM7264SEPBF的Datasheet PDF文件第3页浏览型号IRHM7264SEPBF的Datasheet PDF文件第4页浏览型号IRHM7264SEPBF的Datasheet PDF文件第5页浏览型号IRHM7264SEPBF的Datasheet PDF文件第6页浏览型号IRHM7264SEPBF的Datasheet PDF文件第7页 
PD - 91393D  
REPETITIVE AVALANCHE AND dv/dt RATED  
HEXFET® TRANSISTOR  
IRHM7264SE  
N-CHANNEL  
SINGLE EVENT EFFECT (SEE) RAD HARD  
Product Summary  
Part Number  
250Volt, 0.11Ω, (SEE) RAD HARD HEXFET  
International Rectifier’s (SEE) RAD HARD technology  
HEXFETs demonstrate immunity to SEE failure. Ad-  
ditionally, under identical pre- and post-radiation test  
conditions, International Rectifier’s RAD HARD  
HEXFETs retain identical electrical specifications up  
to 1 x 105 Rads (Si) total dose. No compensation in  
gate drive circuitry is required.These devices are also  
capable of surviving transient ionization pulses as high  
as 1 x 1012 Rads (Si)/Sec, and return to normal op-  
eration within a few microseconds.Since the SEE pro-  
cess utilizes International Rectifier’s patented HEXFET  
technology, the user can expect the highest quality  
and reliability in the industry.  
BVDSS  
RDS(on)  
ID  
IRHM7264SE  
250V  
0.11Ω  
31A  
Features:  
n
n
n
n
n
n
n
n
n
n
n
n
n
Radiation Hardened up to 1 x 105 Rads (Si)  
Single Event Burnout (SEB) Hardened  
Single Event Gate Rupture (SEGR) Hardened  
Gamma Dot (Flash X-Ray) Hardened  
Neutron Tolerant  
Identical Pre- and Post-Electrical Test Conditions  
Repetitive Avalanche Rating  
Dynamic dv/dt Rating  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
RAD HARD HEXFET transistors also feature all of  
the well-established advantages of MOSFETs, such  
as voltage control, very fast switching, ease of paral-  
leling and temperature stability of the electrical pa-  
rameters. They are well-suited for applications such  
as switching power supplies, motor controls, invert-  
ers, choppers, audio amplifiers and high-energy pulse  
circuits in space and weapons environments.  
Electrically Isolated  
Ceramic Eyelets  
Pre-Irradiation  
Absolute Maximum Ratings  
Parameter  
IRHM7264SE  
Units  
I
D
@ V  
= 12V, T = 25°C Continuous Drain Current  
31  
GS  
C
A
I
D
@ V  
= 12V, T = 100°C Continuous Drain Current  
C
19  
GS  
I
Pulsed Drain Current   
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
124  
DM  
@ T = 25°C  
P
250  
W
W/°C  
V
D
C
2.0  
V
±20  
500  
GS  
E
Single Pulse Avalanche Energy ‚  
Avalanche Current   
mJ  
A
AS  
I
31  
AR  
E
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt ƒ  
Operating Junction  
25  
mJ  
V/ns  
AR  
dv/dt  
2.5  
T
-55 to 150  
J
T
Storage Temperature Range  
Lead Temperature  
oC  
STG  
300 (0.063 in. (1.6mm) from  
case for 10 sec.)  
Weight  
9.3 (typical)  
g
www.irf.com  
1
10/9/98  
12345678

中文翻译

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IRHM7264SEPBF 替代型号

型号 品牌 替代类型 描述 数据表
JANSR2N7434 INFINEON

功能相似

 Power Field-Effect Transistor, 31A I(D), 250V, 0.123ohm, 1-Element, N-Channel, Silicon, Me
IRHM7264SE INFINEON

功能相似

 TRANSISTOR N-CHANNEL(BVdss=250V, Rds(on)=0.087ohm, Id=35A*)

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